Abstract: The present invention is a method of aligning components on a flexible integrated circuit. First a rigid substrate is selected. Next a flexible interconnect is deposited on the substrate, the interconnect preferably consisting of alternating polyimide and metal layers. After depositing the interconnect on the substrate, solder bumps are applied to the interconnect. Next, attach electronic components to the interconnect. A second substrate is then attached to the electronic components. Then, remove the first substrate to expose the interconnect. Last, the second substrate is removed to release the integrated circuit module.

Abstract: Method of making an integrated passive, such as a high quality decoupling capacitor, includes providing a first temporary support, a silicon capacitor wafer, and providing an oxide layer and a conductive layer on it. Then, a second temporary support, such as a handle wafer, may be attached to the capacitor wafer (i.e., to the oxide layer on it) by an adhesive bond. The capacitor wafer may then be destructively removed. A second conductive layer is then provided on an exposed backside of the oxide layer. The addition of a second electrode on the second conductive layer yields the desired high quality capacitor. Further processing steps, such as solder bumping, may be carried out while the capacitor wafer is still attached to the handle wafer. When the desired processing steps are complete, the handle wafer is removed, and the relatively thin high quality integrated capacitor wafer results.

Abstract: The present invention is a method of fabricating a semiconductor device using a fully cured BCB layer and removing the same using wet etching. The first step is selecting a substrate. The second step of the method is producing an oxide layer or other coating on the substrate. The third step is applying a BCB layer on the oxide layer. The fourth step is fully curing the BCB layer. The fifth step is processing the device. The sixth step is stressing the substrate, preferably causing the substrate to warp. The seventh step is wet etching the BCB layer. The eighth step is removing the BCB layer. The ninth step is removing the oxide layer.

Abstract: A method of thinning integrated circuits in die form including acquiring a handle wafer; depositing an etch stop material on the handle wafer; coating an adhesive layer onto the etch stop material; acquiring a template wafer; cutting an opening through the template wafer; placing dice onto the adhesive layer of the handle wafer; bonding the template wafer onto the handle wafer; filling any gaps with adhesive material; thinning the resulting structure; acquiring a transfer wafer; coating an adhesive layer onto the transfer wafer; bonding the transfer wafer to the resulting structure; removing the handle wafer; removing the etch stop material; removing any remaining adhesive material; testing electrically the thinned dice; recording which of the thinned dice are functional; dicing the transfer wafer into portions; holding temporarily the portions; removing the transfer wafer from the portions; and packaging the thinned dice.

Abstract: A method of making a multi-chip module by thinning individual integrated circuit die or an integrated circuit wafer containing multiple integrated circuits; bonding thinned dice or a thinned wafer to a mylar, polyimide, semiconductor, or ceramic substrate; depositing at least one interconnect material over the wafer, where the first interconnect layer is deposited directly over the wafer; depositing a dielectric layer over each of the interconnect layers; opening vias in the dielectric layers in order to interconnect the dice and multi-chip module as required; and removing the substrate to form a thin, conformal, and high-yielding multi-chip module.