Abstract: A circuit for electrostatic discharge (ESD) protection for wide frequency range multi-band interfaces. The interface may be split into a plurality of signal paths. Each signal path may include an ESD protection circuit configured to shunt an ESD current on each signal path to either ground or supply voltage and a filter configured to block signals from other signal paths. The signal paths are connected to a common signal line such that the signals for the plurality of signal paths can be transported simultaneously. The plurality of signal paths may be a high frequency path and a low frequency path. The low frequency path may include an inductor connected in series and the high frequency path may include a capacitor or transformer connected in series. The ESD protection circuit on each signal path is placed behind the inductor, the capacitor or the transformer.

Abstract: A circuit for electrostatic discharge (ESD) protection for wide frequency range multi-band interfaces. The interface may be split into a plurality of signal paths. Each signal path may include an ESD protection circuit configured to shunt an ESD current on each signal path to either ground or supply voltage and a filter configured to block signals from other signal paths. The signal paths are connected to a common signal line such that the signals for the plurality of signal paths can be transported simultaneously. The plurality of signal paths may be a high frequency path and a low frequency path. The low frequency path may include an inductor connected in series and the high frequency path may include a capacitor or transformer connected in series. The ESD protection circuit on each signal path is placed behind the inductor, the capacitor or the transformer.

Abstract: An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.

Abstract: A directional pulse injection system and method are described for injecting a pulse into a microelectronic system for electrostatic test. One example has a transformer coupled to a pulse source through a transmission line and to a conductive trace of a test board to apply the electrical pulse to the trace as a test pulse. The test board is connected to a microelectronic device under test. This example also has a cancellation pulse transmission line coupled to the pulse source and a cancellation pulse contact coupled to the pulse source through the cancellation pulse transmission line and to the trace on a side of the trace opposite the transformer to receive a cancellation signal from the pulse source and to couple the cancellation signal to the trace to cancel a portion of the test pulse.

Abstract: A directional pulse injection system and method are described for injecting a pulse into a microelectronic system for electrostatic test. One example has a transformer coupled to a pulse source through a transmission line and to a conductive trace of a test board to apply the electrical pulse to the trace as a test pulse. The test board is connected to a microelectronic device under test. This example also has a cancellation pulse transmission line coupled to the pulse source and a cancellation pulse contact coupled to the pulse source through the cancellation pulse transmission line and to the trace on a side of the trace opposite the transformer to receive a cancellation signal from the pulse source and to couple the cancellation signal to the trace to cancel a portion of the test pulse.

Abstract: An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.

Abstract: An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.

Abstract: A method and a system for ESD protection are provided. In one embodiment, the system comprises a circuit comprising at least one non-linear element, an application module configured to apply a set of current pulses to the circuit, a determination module configured to determine at least one frequency-dependent and amplitude-dependent transfer function of the circuit based on the set of applied current pulses, a modeling module configured to model at least one frequency-dependent and current-dependent impedance of the at least one non-linear element, and a simulation module to simulate a transmission to the circuit based on the model.

Abstract: A method and a system for ESD protection are provided. In one embodiment, the system comprises a circuit comprising at least one non-linear element, an application module configured to apply a set of current pulses to the circuit, a determination module configured to determine at least one frequency-dependent and amplitude-dependent transfer function of the circuit based on the set of applied current pulses, a modeling module configured to model at least one frequency-dependent and current-dependent impedance of the at least one non-linear element, and a simulation module to simulate a transmission to the circuit based on the model.

Abstract: An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.