Patents by Inventor David Jon Lee

David Jon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR FORMING PLANAR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    Publication number: 20220238674
    Abstract: A method of forming a gate of a planar metal oxide semiconductor field effect transistor (MOSFET) reduces gate-drain capacitance. The method may include forming a first gate dielectric portion of the planar MOSFET with a first thickness that is configured to reduce the gate-drain capacitance of the planar MOSFET, forming a second gate dielectric portion of the planar MOSFET on the substrate with a second thickness less than the first thickness, and forming the gate of the planar MOSFET on the first gate dielectric portion and the second gate dielectric portion on the substrate.
    Type: Application
    Filed: January 22, 2021
    Publication date: July 28, 2022
    Inventors: Qintao ZHANG, Samphy HONG, Lei ZHONG, David Jon LEE, Felix LEVITOV, Carlos CABALLERO, Durgaprasad CHATURVEDULA
  • Methods for forming planar metal-oxide-semiconductor field-effect transistors
    Patent number: 11387338
    Abstract: A method of forming a gate of a planar metal oxide semiconductor field effect transistor (MOSFET) reduces gate-drain capacitance. The method may include forming a first gate dielectric portion of the planar MOSFET with a first thickness that is configured to reduce the gate-drain capacitance of the planar MOSFET, forming a second gate dielectric portion of the planar MOSFET on the substrate with a second thickness less than the first thickness, and forming the gate of the planar MOSFET on the first gate dielectric portion and the second gate dielectric portion on the substrate.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: July 12, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Qintao Zhang, Samphy Hong, Lei Zhong, David Jon Lee, Felix Levitov, Carlos Caballero, Durgaprasad Chaturvedula