Abstract: A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic powder surrounds the internal mold. The ceramic powder is sintered to form a solid part. The solid part is removed from the external mold.

Abstract: A component of a plasma processing chamber having a coating on at least one surface that comprises yttrium aluminum. The coating is an aerosol deposited coating from a powder mixture of an yttrium oxide powder and an aluminum-containing powder and having an yttrium to aluminum ratio of 4:1 to 1:4 by molar number. The coating can be annealed to form a porous ternary oxide.

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10?6/K. A metal oxide layer is then disposed over a surface of the component body.

Abstract: A method for forming a coating on a component of a substrate processing system includes arranging the component in a processing chamber and applying a ceramic material to form the coating on one or more surfaces of the component. The ceramic material is comprised of a mixture including a rare earth oxide and having a grain size of less than 150 nm and is applied while a temperature within the processing chamber is less than 400° C. The coating has a thickness of less than 30 ?m. A heat treatment process is performed on the coated component in a heat treatment chamber. The heat treatment process includes increasing a temperature of the heat treatment chamber from a first temperature to a second temperature that does not exceed a melting temperature of the mixture over a first period and maintaining the second temperature for a second period.

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

Abstract: An electrostatic chuck system is provided. A plate has gas apertures. A body formed by an additive process on a first side of the plate.

Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.

Abstract: Textured silicon components of a semiconductor processing chamber having hillock-shaped or pyramid-shaped structures on its surface, and a method of texturing such silicon components. The silicon component can be selectively textured using chemical means to form the hillock-shaped structures to increase the surface area of the silicon component to improve polymer adhesion.

Abstract: A temperature controller for a substrate support in a substrate processing system includes a power parameter module configured to calculate a power parameter indicative of power supplied to the substrate support. A coolant temperature parameter module configured to calculate a coolant temperature parameter indicative of a temperature of a coolant supplied to the substrate support. A heat transfer gas parameter module is configured to calculate a heat transfer gas parameter indicative of flow rates of a heat transfer gas supplied to the substrate support. A temperature calculation module is configured to calculate a temperature of the substrate support using the power parameter, the coolant temperature parameter, and the heat transfer gas parameter.

Abstract: A temperature controller for a substrate support in a substrate processing system includes a power parameter module configured to calculate a power parameter indicative of power supplied to the substrate support. A coolant temperature parameter module configured to calculate a coolant temperature parameter indicative of a temperature of a coolant supplied to the substrate support. A heat transfer gas parameter module is configured to calculate a heat transfer gas parameter indicative of flow rates of a heat transfer gas supplied to the substrate support. A temperature calculation module is configured to calculate a temperature of the substrate support using the power parameter, the coolant temperature parameter, and the heat transfer gas parameter.