Abstract: Methods and apparatuses for a dual heterojunction multijunction solar cell are disclosed. A method in accordance with the present invention comprises growing a base material for a solar cell, growing at least one dual heterojunction on the base material, and growing an emitter on the at least one dual heterojunction. An apparatus in acccordance with the present invention comprises a substrate, and a first subcell, coupled to the substrate, wherein the first subcell comprises a base region, coupled to the substrate, an emitter region, and at least one dual heterojunction, coupled between the base region and the emitter region, wherein the at least one dual heterojunction has a lower bandgap than the emitter region.

Abstract: A solar cell array has at least one solar cell including a photovoltaic structure having a sun-facing front face and a back face, and having an active region, and an isotype heterojunction diode connected in electrical parallel with the active region of the photovoltaic structure.

Abstract: A solar cell structure includes a solar cell of two or more semiconductor layers in facing contact with each other. The semiconductor layers constitute a semiconductor junction producing a voltage between the semiconductor layers when illuminated. A shunt formed of an altered material extends between and at least partially through the semiconductor layers. The shunt has an asymmetric current-voltage characteristic of passing a small current when voltage-biased in a forward direction and passing a large current when voltage-biased in a reverse direction.

Abstract: Methods and apparatus are provided for configuring a Schottky diode with reduced reverse leakage current. The apparatus comprises a dielectric layer interposed between a Schottky metal layer and a Schottky semiconductor layer. The dielectric layer is patterned to allow a limited amount of direct contact between the metal layer and the semiconductor layer, thereby controlling the size and configuration of the Schottky diode active area. Limiting the amount of active diode area can reduce the probability of leakage current due to localized shunts. Moreover, the dielectric layer can also be configured to inhibit diffusion from the metal layer to the semiconductor layer. Accordingly, the reverse leakage current of a Schottky diode with dielectric isolation is typically lower than that of a similar diode with no dielectric layer.

Abstract: In one aspect, a computer-implemented method is provided for aggregating and scheduling product batches in a manufacturing environment. Using a batch aggregation engine implementing a mathematical programming strategy, one or more product demands are allocated to one or more product batches having suggested sizes and suggested starting times. The mathematical programming strategy includes evaluating a number of time-based penalties relative to one another in allocating the demands to the batches, the time-based penalties being based on relationships between suggested starting times for batches and times of demands being considered for allocation to batches. The suggested sizes, the suggested starting times, and feedback relating to the suggested sizes and suggested starting times are communicated from the batch aggregation engine to a scheduling engine to assist the scheduling engine in scheduling starting times for the batches.