Abstract: A method for using a photon source, which includes a semiconductor structure having a first light emitting diode region, a second region including a quantum dot, a first voltage source, and a second voltage source, is provided. The method includes steps of applying an electric field across said first light emitting diode region to cause light emission by spontaneous emission, wherein the light emitted from said first light emitting diode region is absorbed in said second region and produces carriers to populate said quantum dot; and applying a tuneable electric field across said second region to control the emission energy of said quantum dot, wherein the light emitted from the second region exits said photon source.

Abstract: An optoelectronic system comprising a first member and a second member, said first member and said second member comprising a plurality of layers, wherein each member has a profiled mating surface, the first member being connected to the second member such that the growth direction of the layers of the first member are orthogonal to the growth direction of the layers of the second member and the profiled mating surfaces fit together, the first member comprises a waveguide circuit comprising a waveguide and the second member comprises an optoelectronic device with its own optical output which is connected to the waveguide of the first member, the first and second members also being electrically connected.

Abstract: An optical measuring device for measuring a measurement region, the optical device comprising a photonic chip with an interferometer defined on said chip, said interferometer comprising first and second waveguides on said photonic chip and an interference region, wherein the first and second waveguides carry signals from the interference region to the sample region and back to the interference region, the device further comprising a phase adjusting unit configured to vary a phase difference between the signals in the first and second waveguides reflected by the measurement region.

Abstract: An optoelectronic system comprising a first member and a second member, said first member and said second member comprising a plurality of layers, wherein each member has a profiled mating surface, the first member being connected to the second member such that the growth direction of the layers of the first member are orthogonal to the growth direction of the layers of the second member and the profiled mating surfaces fit together, the first member comprises a waveguide circuit comprising a waveguide and the second member comprises an optoelectronic device with its own optical output which is connected to the waveguide of the first member, the first and second members also being electrically connected.

Abstract: An optical device comprising: a photonic crystal structure, comprising: a layer of a first material, the layer comprising a quantum emitter; and a plurality of regions of a second material in the layer of the first material, the regions arranged in a regular lattice having at least one region missing from the lattice so that a defect is formed, wherein the quantum emitter is located in the defect part of the photonic crystal structure; wherein the second material has a different refractive index to the first material; and an electrode which is electrically contacted to only the defect part of the photonic crystal structure.

Abstract: A semiconductor structure with a waveguide, the semiconductor structure has a plurality of layers, at least one of which being partially laterally oxidised, said laterally oxidised material modifying the lateral effective refractive index with said structure in order to form a waveguide within the structure, the structure also has a quantum dot, said quantum dot being configured to emit photons into said waveguide, the waveguide being configured such that it guides the output from a single quantum dot.