Abstract: An eyepiece and waveguide for viewing a projected image in a virtual reality and augmented reality imaging and visualization system. The waveguide may include a substrate for guiding light. The waveguide may also include an incoupling diffractive element disposed within or on the substrate and configured to diffract an incoupled light related to the projected image into the substrate. The waveguide may further include a first grating disposed within or on the substrate and configured to manipulate the diffracted incoupled light from the incoupling diffractive element so as to multiply the projected image and to direct the multiplied projected image to a second grating. The second grating may be disposed within or on the substrate and may be configured to outcouple the manipulated diffracted incoupled light from the waveguide. The first grating and the second grating may occupy a same region of the waveguide.

Abstract: A method of manufacturing a waveguide having a combination of a binary grating structure and a blazed grating structure includes cutting a substrate off-axis, depositing a first layer on the substrate, and depositing a resist layer on the first layer. The resist layer includes a pattern. The method also includes etching the first layer in the pattern using the resist layer as a mask. The pattern includes a first region and a second region. The method further includes creating the binary grating structure in the substrate in the second region and creating the blazed grating structure in the substrate in the first region.

Abstract: A method of manufacturing a waveguide having a combination of a binary grating structure and a blazed grating structure includes cutting a substrate off-axis, depositing a first layer on the substrate, and depositing a resist layer on the first layer. The resist layer includes a pattern. The method also includes etching the first layer in the pattern using the resist layer as a mask. The pattern includes a first region and a second region. The method further includes creating the binary grating structure in the substrate in the second region and creating the blazed grating structure in the substrate in the first region.

Abstract: A method of manufacturing a waveguide having a combination of a binary grating structure and a blazed grating structure includes cutting a substrate off-axis, depositing a first layer on the substrate, and depositing a resist layer on the first layer. The resist layer includes a pattern. The method also includes etching the first layer in the pattern using the resist layer as a mask. The pattern includes a first region and a second region. The method further includes creating the binary grating structure in the substrate in the second region and creating the blazed grating structure in the substrate in the first region.

Abstract: A method of manufacturing a waveguide having a combination of a binary grating structure and a blazed grating structure includes cutting a substrate off-axis, depositing a first layer on the substrate, and depositing a resist layer on the first layer. The resist layer includes a pattern. The method also includes etching the first layer in the pattern using the resist layer as a mask. The pattern includes a first region and a second region. The method further includes creating the binary grating structure in the substrate in the second region and creating the blazed grating structure in the substrate in the first region.

Abstract: An eyepiece and waveguide for viewing a projected image in a virtual reality and augmented reality imaging and visualization system. The waveguide may include a substrate for guiding light. The waveguide may also include an incoupling diffractive element disposed within or on the substrate and configured to diffract an incoupled light related to the projected image into the substrate. The waveguide may further include a first grating disposed within or on the substrate and configured to manipulate the diffracted incoupled light from the incoupling diffractive element so as to multiply the projected image and to direct the multiplied projected image to a second grating. The second grating may be disposed within or on the substrate and may be configured to outcouple the manipulated diffracted incoupled light from the waveguide. The first grating and the second grating may occupy a same region of the waveguide.

Abstract: A digital holographic apparatus, system, and method are disclosed. The apparatus includes an electronic display device comprising an interferometric spatial light modulator based display engine and a processor coupled to the electronic display device. The processor is operative to upload digital content to the electronic display device. The digital content is displayed on the electronic display device and is recorded into a holographic medium when the holographic medium and the electronic display device are flood exposed by a laser generated light beam. The system additionally includes at least one laser coupled optically coupled to the electronic display device and communicatively coupled to the processor. A method of recording a digital hologram in a holographic medium using the digital holographic system also is disclosed.

Abstract: An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.

Abstract: An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.

Abstract: Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods.

Abstract: Fullerene-capped Group IV nanoparticles, materials and devices made from the nanoparticles, and methods for making the nanoparticles are provided. The fullerene-capped Group IV nanoparticles have enhanced electron transporting properties and are well-suited for use in photovoltaic, electronics, and solid-state lighting applications.

Abstract: Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.

Abstract: The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.

Abstract: A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10?7 Torr and about 1×10?4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.

Abstract: Fullerene-capped Group IV nanoparticles, materials and devices made from the nanoparticles, and methods for making the nanoparticles are provided. The fullerene-capped Group IV nanoparticles have enhanced electron transporting properties and are well-suited for use in photovoltaic, electronics, and solid-state lighting applications.

Abstract: A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each nanoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.

Abstract: A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.

Abstract: Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods.

Abstract: An apparatus for making a set of Group IV nanoparticles is disclosed. The apparatus includes a top plate, the top plate further including an outlet port; a bottom plate; and a casing extending between the top plate and the bottom plate. The apparatus also includes a particle collector assembly configured to be in fluid communication with the outlet port; and a primary precursor tubing assembly passing through the bottom plate into the casing, the primary precursor tubing assembly including a primary precursor tubing assembly nozzle.

Abstract: Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods.