Patents by Inventor David K. Christen
David K. Christen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8741158Abstract: An article having a nanostructured surface and a method of making the same are described. The article can include a substrate and a nanostructured layer bonded to the substrate. The nanostructured layer can include a plurality of spaced apart nanostructured features comprising a contiguous, protrusive material and the nanostructured features can be sufficiently small that the nanostructured layer is optically transparent. A surface of the nanostructured features can be coated with a continuous hydrophobic coating. The method can include providing a substrate; depositing a film on the substrate; decomposing the film to form a decomposed film; and etching the decomposed film to form the nanostructured layer.Type: GrantFiled: October 29, 2010Date of Patent: June 3, 2014Assignee: UT-Battelle, LLCInventors: Tolga Aytug, John T. Simpson, David K. Christen
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Patent number: 8647915Abstract: A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material.Type: GrantFiled: December 21, 2010Date of Patent: February 11, 2014Assignees: UT-Battelle, LLC, University of Tennessee Research FoundationInventors: Tolga Aytug, David K. Christen, Mariappan Parans Paranthaman, Özgur Polat
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Publication number: 20130236695Abstract: An article having a nanostructured surface and a method of making the same are described. The article can include a substrate and a nanostructured layer bonded to the substrate. The nanostructured layer can include a plurality of spaced apart nanostructured features comprising a contiguous, protrusive material and the nanostructured features can be sufficiently small that the nanostructured layer is optically transparent. A surface of the nanostructured features can be coated with a continuous hydrophobic coating. The method can include providing a substrate; depositing a film on the substrate; decomposing the film to form a decomposed film; and etching the decomposed film to form the nanostructured layer.Type: ApplicationFiled: April 30, 2013Publication date: September 12, 2013Inventors: Tolga AYTUG, David K. CHRISTEN, John T. SIMPSON
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Publication number: 20120152337Abstract: A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material.Type: ApplicationFiled: December 21, 2010Publication date: June 21, 2012Inventors: Tolga Aytug, David K. Christen, Mariappan Parans Paranthaman, Özgur Polat
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Publication number: 20120088066Abstract: An article having a nanostructured surface and a method of making the same are described. The article can include a substrate and a nanostructured layer bonded to the substrate. The nanostructured layer can include a plurality of spaced apart nanostructured features comprising a contiguous, protrusive material and the nanostructured features can be sufficiently small that the nanostructured layer is optically transparent. A surface of the nanostructured features can be coated with a continuous hydrophobic coating. The method can include providing a substrate; depositing a film on the substrate; decomposing the film to form a decomposed film; and etching the decomposed film to form the nanostructured layer.Type: ApplicationFiled: October 29, 2010Publication date: April 12, 2012Applicant: UT-Battelle, LLCInventors: Tolga Aytug, John T. Simpson, David K. Christen
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Patent number: 6956012Abstract: An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.Type: GrantFiled: April 24, 2003Date of Patent: October 18, 2005Assignee: UT-Battelle, LLCInventors: M. Parans Paranthaman, Tolga Aytug, David K. Christen
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Patent number: 6764770Abstract: Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO3, R1−xAxMnO3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.Type: GrantFiled: December 19, 2002Date of Patent: July 20, 2004Assignee: UT-Battelle, LLCInventors: Mariappan P. Paranthaman, Tolga Aytug, David K. Christen, Roeland Feenstra, Amit Goyal
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Publication number: 20040121191Abstract: Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO3, R1−xAxMnO3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.Type: ApplicationFiled: December 19, 2002Publication date: June 24, 2004Inventors: Mariappan P. Paranthaman, Tolga Aytug, David K. Christen, Roeland Feenstra, Amit Goyal
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Publication number: 20030211948Abstract: An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.Type: ApplicationFiled: April 24, 2003Publication date: November 13, 2003Inventors: M. Parans Paranthaman, Tolga Aytug, David K. Christen
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Patent number: 6617283Abstract: An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.Type: GrantFiled: June 22, 2001Date of Patent: September 9, 2003Assignee: UT-Battelle, LLCInventors: M. Parans Paranthaman, Tolga Aytug, David K. Christen
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Patent number: 6555256Abstract: The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.Type: GrantFiled: November 6, 2000Date of Patent: April 29, 2003Assignee: UT-Battelle, LLCInventors: David K. Christen, Qing He
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Publication number: 20020198112Abstract: An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.Type: ApplicationFiled: June 22, 2001Publication date: December 26, 2002Inventors: M. Parans Paranthaman, Tolga Aytug, David K. Christen
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Patent number: 6296701Abstract: The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.Type: GrantFiled: September 30, 1998Date of Patent: October 2, 2001Assignee: UT-Battelle, LLCInventors: David K. Christen, Qing He
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Patent number: 5968877Abstract: A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO.sub.2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J.sub.c) in the range of at least 100,000 A/cm.sup.2 at 77 K.Type: GrantFiled: June 26, 1996Date of Patent: October 19, 1999Assignee: Lockheed Martin Energy Research CorpInventors: John D. Budai, David K. Christen, Amit Goyal, Qing He, Donald M. Kroeger, Dominic F. Lee, Frederick A. List, III, David P. Norton, Mariappan Paranthaman, Brian C. Sales, Eliot D. Specht
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Patent number: 5958599Abstract: A biaxially textured alloy article includes a rolled and annealed biaxially textured base metal substrate characterized by an x-ray diffraction phi scan peak of no more than 20.degree. FWHM; and a biaxially textured layer of an alloy or another material on a surface thereof. The article further includes at least one of an electromagnetic device or an electro-optical device epitaxially joined to the alloy.Type: GrantFiled: January 9, 1998Date of Patent: September 28, 1999Assignee: Lockheed Martin Energy Research CorporationInventors: Amit Goyal, John D. Budai, Donald M. Kroeger, David P. Norton, Eliot D. Specht, David K. Christen
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Patent number: 5898020Abstract: A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.Type: GrantFiled: May 22, 1996Date of Patent: April 27, 1999Inventors: Amit Goyal, John D. Budai, Donald M. Kroeger, David P. Norton, Eliot D. Specht, David K. Christen
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Patent number: 5741377Abstract: A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.Type: GrantFiled: April 10, 1995Date of Patent: April 21, 1998Assignee: Martin Marietta Energy Systems, Inc.Inventors: Amit Goyal, John D. Budai, Donald M. Kroeger, David P. Norton, Eliot D. Specht, David K. Christen
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Patent number: 5739086Abstract: A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.Type: GrantFiled: May 22, 1996Date of Patent: April 14, 1998Assignee: Lockheed Martin Energy Systems, Inc.Inventors: Amit Goyal, John D. Budai, Donald M. Kroeger, David P. Norton, Eliot D. Specht, David K. Christen