Abstract: One of two input bias states to a qubit semiconductor waveguide gate controls the transmission of charge carriers to the output of one of two parallel waveguides. Intermediate the ends of the waveguides is a coupling. It permits charge carriers introduced at the input of one of the waveguides to either pass directly along that waveguide to an output end thereof or to move to the other waveguide to be received at that waveguide's output end as determined by an electrical or magnetic bias applied to the device. Acting thus, the gate can be used as a gate in quantum computation. For purposes of encryption, spin polarization of the carriers is controlled. The carriers (electrons, for example) can be in polarized to a single up or down spin condition at a quantum point contact by application of a magnetic field or they can be left unpolarized.

Abstract: An improved developer for PMMA, electron resist comprising an effective amount of MEK in combination with MIBK or CS alone or a mixture thereof and a process of obtaining improved contrast in electron beam lithography therewith.

Abstract: An improved developer for PMMA electron resist comprising an effective amount of MEK in combination with MIBK or CS alone or a mixture thereof.

Abstract: A lateral surface superlattice device having electronically created quantum wells which exhibits negative differential conductivity at ambient temperature and process for producing same.

Abstract: A superlattice semiconductor device consisting of a plurality of multi-dimensional charge carrier confinement regions of semiconductor material exhibiting relatively high charge carrier mobility and a low band gap which are laterally located in a single planar layer of semiconductor material exhibiting a relatively low charge carrier mobility and high band gap and wherein the confinement regions have sizes and mutual separation substantially equal to or less than the appropriate deBroglie wavelength. The device, in its preferred form, comprises a thin film of semiconductor material selected from group II-VI or III-V compounds or silicon wherein there is formed laterally located cylindrically shaped periodic regions which are adapted to act as quantum well confinement regions for electrons.