Abstract: A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.

Abstract: A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.

Abstract: The invention provides a method for electrically connecting a polysilicon-filled trench to a diffusion region in a semiconductor device, wherein the trench and diffusion region are separated by a dielectric. The method provides for formation of a strap or bridge contact by utilizing a diffusion barrier layer which prevents diffusion into an overlying polysilicon layer when a subsequent boron out-diffusion step is performed. Selective etching is then utilized to remove the polysilicon layer where no boron has diffused, leaving a polysilicon strap connecting the trench and diffusion region.