Abstract: In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

Abstract: Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A <111> surface may be formed on a substrate and a Group III-V material may be grown from the <111> surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure.

Abstract: Apparatus for the removal of exhaust gases are provided herein. In some embodiments, an exhaust apparatus may include a housing defining an inner volume, an inlet and an outlet formed in the housing to facilitate flow of an exhaust gas through the inner volume, wherein the inlet is configured to be coupled to an exhaust outlet of a semiconductor process chamber to receive the exhaust gas therefrom, and wherein the exhaust gas can flow through the inner volume substantially free from obstruction, an ultraviolet light source to provide ultraviolet energy to the exhaust gas present the inner volume during use, wherein the ultraviolet light source provides sufficient energy to at least partially decompose the exhaust gas, and a conduit coupled to the outlet and configured allow at least some ultraviolet energy provided from the ultraviolet light source to travel directly along an axial length of the conduit.

Abstract: Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A <111> surface may be formed on a substrate and a Group III-V material may be grown from the <111> surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure.

Abstract: In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

Abstract: Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

Abstract: A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.

Abstract: Apparatus for the removal of exhaust gases are provided herein. In some embodiments, an exhaust apparatus may include a housing defining an inner volume, an inlet and an outlet formed in the housing to facilitate flow of an exhaust gas through the inner volume, wherein the inlet is configured to be coupled to an exhaust outlet of a semiconductor process chamber to receive the exhaust gas therefrom, and wherein the exhaust gas can flow through the inner volume substantially free from obstruction, an ultraviolet light source to provide ultraviolet energy to the exhaust gas present the inner volume during use, wherein the ultraviolet light source provides sufficient energy to at least partially decompose the exhaust gas, and a conduit coupled to the outlet and configured allow at least some ultraviolet energy provided from the ultraviolet light source to travel directly along an axial length of the conduit.

Abstract: Methods and apparatus for the removal of exhaust gases are provided herein. In some embodiments, an exhaust apparatus may include a housing defining an inner volume; an inlet and an outlet formed in the housing to facilitate flow of an exhaust gas through the inner volume, wherein the inlet is configured to be coupled to a process chamber to receive an exhaust therefrom; and an ultraviolet light source to provide ultraviolet energy to the inner volume. The ultraviolet light source may provide sufficient energy to at least partially decompose the exhaust gases. In some embodiments, the ultraviolet light source may provide ultraviolet energy until the exhaust gas has cooled below a critical temperature.

Abstract: Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

Abstract: Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

Abstract: A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.

Abstract: A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.

Abstract: Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

Abstract: Methods and apparatus for the removal of exhaust gases are provided herein. In some embodiments, an exhaust apparatus may include a housing defining an inner volume; an inlet and an outlet formed in the housing to facilitate flow of an exhaust gas through the inner volume, wherein the inlet is configured to be coupled to a process chamber to receive an exhaust therefrom; and an ultraviolet light source to provide ultraviolet energy to the inner volume. The ultraviolet light source may provide sufficient energy to at least partially decompose the exhaust gases. In some embodiments, the ultraviolet light source may provide ultraviolet energy until the exhaust gas has cooled below a critical temperature.

Abstract: A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.