Abstract: An etchant for dielectrics, such as silicon dioxide, that leaves monocrystalline silicon surface exposed by the etchant free of etch damage, such as etch pits, when the etch is done in the presence of transition metals, such as copper, tungsten, titanium, gold, etc. The etchant comprises hydrofluoric acid and a source of halide anion, such as hydrochloric acid or a metal-halide. The etchant is useful in microelectromechanical system device fabrication and in deprocessing integrated circuits or the like.

Abstract: Methods of preventing sustained monomorphic ventricular tachycardia following myocardial ischemia, decreasing infarct size and/or decreasing the incidence and/or maximum intrinsic rate of very rapid ventricular triplets following myocardial ischemia is disclosed. The methods involve administering an effective amount of a composition that inhibits substantial loss of beta-adrenergic receptor kinase (?-ARK) activity and/or ?-ARK expression.