Abstract: A weighing system is provided for a continuous Czochralski process that accurately measures the weight of the crucible and melt during crystal growth to control the introduction of feedstock in order to keep the weight approximately constant. The system can measure the weight of the crucible while the crucible is rotating, and is insensitive to vibrations of the melt surface as well as variable torques on the crucible shaft induced by the rotation. The system also measures the weight of the crucible and its contents in order to control the amount of feedstock recharged after an ingot is withdrawn.

Abstract: In a Czochralski process for growing single crystal silicon ingots, a system is provided for adding solid material to the liquid silicon during crystal growth for the purpose of directly controlling the latent heat of fusion with respect to a crystal melt interface. In contrast to the standard method for controlling power to the crucible heater, the present system has been found to be much more effective for controlling melt temperature in the crucible, especially in heavily insulated systems. The system provides the advantage of reducing the electric power required to operate a Czochralski grower, while increasing the speed with which the melt temperature can be raised or lowered in a controlled manner.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: A wire saw and wafer stabilizing system are provided for holding wafer sections invariantly against vibration and unwanted movement during the sawing process. A stabilizing means is applied to the ends of partially defined wafer sections at an early stage when the wafer sections are partially cut through a silicon ingot or block of silicon material. The stabilizing means serves to stabilize the wafer sections immovably against vibration, oscillation, or unwanted contact during the subsequent sawing process. The stabilizing system also accelerates handling of the wafers after slicing is completed, facilitates the cleaning process, and allows for more rapid or automated placement of the wafers in cassettes. Wafers produced by the stabilizing system are characterized by a minimized total thickness variation, substantially uniform planarity, and substantially without bow or warp.

Abstract: A retreaded tire assembly and method for making the same is disclosed. The method and assembly provide for the application of new tread to a buffed tire casing with only a layer of cushion gum disposed therebetween. The cushion gum is applied directly to the buffed circumference of a tire casing without the use of conventional spray cement normally applied to the buffed surface of the entire casing.

Abstract: A retreaded tire assembly and method for making the same is disclosed. The method and assembly provide for the application of new tread to a buffed tire casing with only a layer of cushion gum disposed therebetween. The cushion gum is applied directly to the buffed circumference of a tire casing without the use of conventional spray cement normally applied to the buffed surface of the entire casing.

Abstract: A method and adhesive system for bonding at least two elastomeric substrates together. The method comprises subjecting the substrates to a priming treatment followed by applying to the primed substrates a heat-curable polyurethane adhesive composition comprising an isocyanate-terminated prepolymer and a polyhydroxide compound. The surfaces of the substrates so treated are contacted and subjected to heat-curing to bond the substrates together.

Abstract: Method for forming a composite elastomer tire tread by applying a heat curable liquid elastomer mixture to a thin rubber sheet and curing the liquid mixture to form the composite tire tread. A tire retreaded with such a composite tire elastomer tread is also described.

Abstract: Apparatus for production of semiconductor ribbon materials of the type in which molten material is brought into contact with the surface of a rotating cool wheel or drum wherein the cooling surface of the drum is textured to form a plurality of discrete contacting points to enhance growth of large crystal grains.

Abstract: An electrically enhanced liquid jet process particularly adapted for forming scribe lines on thin film material deposited during fabrication of thin film solar cell devices. A narrow jet of liquid solution is directed onto a thin film along a desired line while an electrical current is passed through the liquid jet and the film being processed. The liquid solution is selected to remove material along the desired line only at its point of contact with the film but to be substantially nonreactive with the film in all other areas where there is an absence of electrical enhancement.

Abstract: A tundish for use in casting a ribbon of crystalline or coarse grain polycrystalline material, having a support for a hopper containing molten material, the hopper having a bottom plate and three side wall plates and a top plate, each made of a material which will not interact with the molten material contained within the space defined by the bottom plate, side wall plates and top plate, to impart any significant impurity into the molten material, and wherein the top plate slants downwardly towards the bottom plate to form an elongated orifice through which molten material is extruded onto a cool surface where crystallization of a ribbon of material occurs. As disclosed, the top plate is movable with respect to the bottom plate to change the thickness of the orifice. Also as disclosed, the top plate slides in a slot in each of two opposed side walls and is of a length such that it forms with the third side wall an opening into which molten material is added to the tundish.

Abstract: Apparatus and method for producing semiconductor ribbon directly from the molten state by contact with a moving chill surface wherein water vapor is introduced to improve ribbon top surface smoothness.

Abstract: Apparatus and method for producing semiconductor ribbon directly from the molten state by contact with a moving chill surface wherein the chill surface has longitudinal grooves near its outer edges to define ribbon width and improve smoothness of ribbon edges.

Abstract: A silicon ribbon growth wheel having an internal cooling fluid contacting surface modified to provide a lateral temperature profile on the wheel surface of lower temperature near the wheel edges. In a preferred form the inner surface is provided with grooves near the wheel edges to increase heat conduction to the cooling fluid at the wheel edges. A method for surface temperature profiling the growth wheel is also disclosed. A method for surface temperature profiling the growth wheel is also disclosed.

Abstract: A silicon ribbon growth wheel having a thermal resistance zone between an outer silicon contacting surface and an inner cooling fluid contacting surface to control rate of heat flow from the outer to inner surfaces. In a preferred form the thermal resistance zone is defined by a row of holes through the wheel near the outer surface with said holes isolated from the cooling fluid. A method for controlling the heat flow is also diclosed.

Abstract: A take-up reel and take-up reel starting feed for use in high speed ribbon crystallization of molten material e.g., a metal or a semiconductor material, in which a starting strip is pre-wound onto the take-up reel sufficiently to frictionally engage the take-up reel and be thereby drawn onto the take-up reel from a supply reel for the starting strip, and wherein the linear velocity of the starting strip in a contact zone is synchronized with the linear velocity of a cast ribbon of the material leaving a rotating drum on which the casting initiated, so that the ribbon of cast material, after it passes over the starting strip in the contact zone, will contact the starting strip and pass onto the take-up reel in contact with the starting strip and without bunching or significant stretching of the ribbon of cast material.