Patents by Inventor David L. Bouldin

David L. Bouldin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Isotropic etchant for capped silicide processes
    Patent number: 4940509
    Abstract: A capped silicide process which prevents reactions between the siliciding metal and oxygen contaminants and prevents silicon outdiffusion. In one form the process entails formation of a cap layer over the metal layer prior to performing the silicide reaction and subsequent removal of the cap layer with an isotropic etchant that does not degrade the underlying silicide.
    Type: Grant
    Filed: March 25, 1988
    Date of Patent: July 10, 1990
    Assignee: Texas Instruments, Incorporated
    Inventors: Stephen T. Tso, David L. Bouldin, Mark R. Calley, Charlotte M. Tipton
  • Multilevel metallization method for fabricating a metal oxide semiconductor device
    Patent number: 4111775
    Abstract: An improved method of constructing a metal oxide semiconductor (MOS) device having multiple layers of metal deposited by D.C. magnetron sputtering at low D.C. voltages and low substrate temperatures provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.
    Type: Grant
    Filed: July 8, 1977
    Date of Patent: September 5, 1978
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Ben R. Hollis, Jr., William R. Feltner, David L. Bouldin, Donald E. Routh