Abstract: Coating compositions are provided that include a component that is a product of materials comprising an amine and an anhydride and/or an anhydride derivative. Compositions of the invention are particularly useful as an underlying antireflective coating composition (“ARC”) employed with an overcoated photoresist layer in the manufacture of microelectronic wafers and other electronic devices.

Abstract: A polyimide coating composition comprising an homogeneous liquid solution of (a) a polyimide or polyimide precursor, (b) a substituted silane compound and (c) aprotic solvent.

Abstract: A process for the synthesis of the photosensitive polyamic acid derivatives which are polyimide precursors, comprising the sequential steps:(1) Partially derivatizing an aromatic dianhydride with a reactive monomer containing a photosensitive moiety;(2) Condensation polymerizing the partially derivatized aromatic dianhydride with aromatic diamine to form polyamic acid;(3) Isoimidization of the polyamic acid;(4) Condensation of the polyisoimide to polyamic acid derivative by reaction with additional reactive monomer; and(5) Separation of the polyamic acid derivative.

Abstract: An electrical device coated with a polymerized polyimide structure resulting from a radiation-sensitive polyimide precursor composition which comprises a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism; R.sup.1 is a divalent aromatic, aliphatic or cycloaliphatic radical containing at least 2 carbon atoms; R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond; and R.sup.4 and R.sup.5 are selected from the group consisting of perfluoro and perhalofluoro aliphatic hydrocarbons having 1 to 8 carbons.

Abstract: A radiation-sensitive polyimide precursor composition, comprising a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism;R.sup.1 is a tetravalent aromatic non-halogen containing organic radical containing at least one ring of six carbon atoms, said ring characterized by benzenoid unsaturation, the four carbonyl groups being attached directly to separate carbon atoms in a ring of the R.sup.1 radical;R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond, at least one of R.sup.2 and R.sup.3 being said organic radical;R.sup.4 and R.sup.

Abstract: A radiation-sensitive polyimide precursor composition comprises a polymer of the formula ##STR1## wherein n is a positive integer corresponding to the number of units in the polymer and is sufficiently large to provide the polymer with a number average molecular weight of about 1500-15,000 as determined by vapor pressure osmometry, and wherein for any particular unit in the polymer:.fwdarw.denotes isomerism; R.sup.1 is a divalent aromatic, aliphatic or cycloaliphatic radical containing at least 2 carbon atoms; R.sup.2 and R.sup.3 are selected from the group consisting of a hydrogen radical and any organic radical containing a photopolymerizable olefinic double bond; and R.sup.4 and R.sup.5 are selected from the group consisting of perfluoro and perhalofluoro aliphatic hydrocarbons having 1 to 8 carbons.

Abstract: A polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups useful for forming relief structures on electrical devices such as capacitors, integrated circuits, printed circuits and semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer which is the base for an electrical device, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:radiation sensitive polymerizable polyfunctional acrylate compound and photopolymerization initiators containing hydrogen donor initiator and aromatic biimidazole, and an oxygen scave

Abstract: An electrical device formed from a polymeric heat resistant photopolymerizable composition of a polyamide ester, resin containing photopolymerizable groups which forms a relief structures on electrical devices such as capacitors, integrated circuits, printed circuits, multilayer circuits or semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition: a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.

Abstract: An improved process for forming relief structures on electrical devices such as capacitors, integrated circuits, printed circuits and semiconductors; a solution of a composition a polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups is applied to substrate such as a coated silicon wafer, which forms the base an electrical device, and is dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is converted to a polyimide structure having a sharp definition and good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.

Abstract: A polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups useful for forming relief structures on electrical devices such as capacitors, integrated circuits and semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer which forms an electrical device, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is baked to form a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition:a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.