Abstract: An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.

Abstract: An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.

Abstract: An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.

Abstract: Micromachined devices and methods for making the devices. The device includes: a first wafer having at least one via; and a second wafer having a micro-electromechanical-systems (MEMS) layer. The first wafer is bonded to the second wafer. The via forms a closed loop when viewed in a direction normal to the top surface of the first wafer to thereby define an island electrically isolated. The method for fabricating the device includes: providing a first wafer having at least one via; bonding a second wafer having a substantially uniform thickness to the first wafer; and etching the bonded second wafer to form a micro-electromechanical-systems (MEMS) layer.

Abstract: An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.

Abstract: Micromachined devices and methods for making the devices. The device includes: a first wafer having at least one via; and a second wafer having a micro-electromechanical-systems (MEMS) layer. The first wafer is bonded to the second wafer. The via forms a closed loop when viewed in a direction normal to the top surface of the first wafer to thereby define an island electrically isolated. The method for fabricating the device includes: providing a first wafer having at least one via; bonding a second wafer having a substantially uniform thickness to the first wafer; and etching the bonded second wafer to form a micro-electromechanical-systems (MEMS) layer.

Abstract: Method for manufacturing microelectromechanical mirror and mirror array. Control electrodes and addressing circuitry are etched from a metallic layer deposited onto a reference layer substrate. Standoff-posts are etched from a subsequently deposited polyimide layer. A freely movable plate flexibly suspended from a plurality of electrostatic actuators that are flexibly suspended from a support frame is etched from an actuation layer substrate using a high aspect ratio etch. A mirror support post and surface are etched from a mirror substrate using a high aspect ratio etch. The mirror and actuation layer substrates are fusion bonded together. The reference and actuation layer substrates are bonded together and held apart by the standoff posts. A reflective metallic layer is deposited onto the mirror surface and polished. The mirror is etched from the mirror surface to free the microelectromechanical mirror. Mirror arrays are made by performing the aforementioned steps using standard IC processing techniques.

Abstract: Method for manufacturing microelectromechanical mirror and mirror array. Control electrodes and addressing circuitry are etched from a metallic layer deposited onto a reference layer substrate. Standoff-posts are etched from a subsequently deposited polyimide layer. A freely movable plate flexibly suspended from a plurality of electrostatic actuators that are flexibly suspended from a support frame is etched from an actuation layer substrate using a high aspect ratio etch. A mirror support post and surface are etched from a mirror substrate using a high aspect ratio etch. The mirror and actuation layer substrates are fusion bonded together. The reference and actuation layer substrates are bonded together and held apart by the standoff posts. A reflective metallic layer is deposited onto the mirror surface and polished. The mirror is etched from the mirror surface to free the microelectromechanical mirror. Mirror arrays are made by performing the aforementioned steps using standard IC processing techniques.