Abstract: A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A first dielectric layer has a first dielectric constant located over a semiconductor substrate. A metal structure located over the first dielectric layer has a side surface. A second dielectric layer having a second different dielectric constant is located adjacent the metal structure. A dielectric structure located between the side surface of the metal structure and the second dielectric layer has the first dielectric constant.

Abstract: A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A first dielectric layer has a first dielectric constant located over a semiconductor substrate. A metal structure located over the first dielectric layer has a side surface. A second dielectric layer having a second different dielectric constant is located adjacent the metal structure. A dielectric structure located between the side surface of the metal structure and the second dielectric layer has the first dielectric constant.

Abstract: A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A metal plate having a top surface and a side surface is located over a first dielectric layer. A second dielectric layer of a second different material is located over the first metal plate. A dielectric structure of the first material is located over the side surface of the metal plate and over the surface of the first dielectric layer.

Abstract: A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A metal plate having a top surface and a side surface is located over a first dielectric layer. A second dielectric layer of a second different material is located over the first metal plate. A dielectric structure of the first material is located over the side surface of the metal plate and over the surface of the first dielectric layer.

Abstract: A method and structure for improving high voltage breakdown reliability of a microelectronic device, e.g., a galvanic digital isolator, involves providing an abatement structure around metal plate corners of a high voltage isolation capacitor to ameliorate the effects of an electric field formed thereat during operation of the device due to dielectric discontinuity.

Abstract: A method and structure for improving high voltage breakdown reliability of a microelectronic device, e.g., a galvanic digital isolator, involves providing an abatement structure around metal plate corners of a high voltage isolation capacitor to ameliorate the effects of an electric field formed thereat during operation of the device due to dielectric discontinuity.

Abstract: Systems and methods for digital isolation in circuits are provided. On power-up in an isolation application, there may be multiple power supplies. For example, one for an input side and one for an output side, both in relation to an isolation barrier. Upon power up, the input and output may not be at the same state. The bias of the output may be the opposite of what is on the input. An isolator solution is provided which integrates the digital isolation into the analog solution. A DC signal corresponds to the static state of the data at start-up and an AC signal is generated when switching begins. In one example, the output level corresponds to the input level when the steady state information is encoded and sent across as an AC signal.

Abstract: Systems and methods for digital isolation in circuits are provided. On power-up in an isolation application, there may be multiple power supplies. For example, one for an input side and one for an output side, both in relation to an isolation barrier. Upon power up, the input and output may not be at the same state. The bias of the output may be the opposite of what is on the input. An isolator solution is provided which integrates the digital isolation into the analog solution. A DC signal corresponds to the static state of the data at start-up and an AC signal is generated when switching begins. In one example, the output level corresponds to the input level when the steady state information is encoded and sent across as an AC signal.