Abstract: This disclosure provides systems, methods, and apparatus for treating a self-assembled monolayer coating on a dielectric layer to improve epoxy adhesion to the self-assembled monolayer coating. In implementations of the methods, a dielectric layer on a surface of a substrate is provided. A self-assembled monolayer coating is formed on the dielectric layer. A seal region of the self-assembled monolayer coating is selectively treated. A component is bonded to the seal region of the self-assembled monolayer coating with an epoxy. Implementations of the methods may be used to encapsulate an electromechanical systems device on the substrate with a cover using an epoxy.

Abstract: This disclosure provides systems, methods, and apparatus for treating a self-assembled monolayer coating on a dielectric layer to improve epoxy adhesion to the self-assembled monolayer coating. In implementations of the methods, a dielectric layer on a surface of a substrate is provided. A self-assembled monolayer coating is formed on the dielectric layer. A seal region of the self-assembled monolayer coating is selectively treated. A component is bonded to the seal region of the self-assembled monolayer coating with an epoxy. Implementations of the methods may be used to encapsulate an electromechanical systems device on the substrate with a cover using an epoxy.

Abstract: At least some subpixels in an interferometric modulator display are formed in a triangular shape. Such triangular subpixels may be formed and/or addressed in a variety of manners. At least some individual triangular subpixels may be separately addressable. However, a plurality of triangular subpixels may be addressable as a group, e.g., as a group of 2, 3, 4 or more. A single pixel may include varying numbers of triangular subpixels. For example, a single pixel may include 3, 6, 9, 12, 15, 18, 21 or some other number of triangular subpixels. Alternatively, a single pixel may include 4, 8, 12, 16, 20, or some other number of triangular subpixels. A single pixel may include triangular subpixels that are configured to be separately addressable and/or triangular subpixels are configured to be addressable as a group.

Abstract: At least some subpixels in an interferometric modulator display are formed in a triangular shape. Such triangular subpixels may be formed and/or addressed in a variety of manners. At least some individual triangular subpixels may be separately addressable. However, a plurality of triangular subpixels may be addressable as a group, e.g., as a group of 2, 3, 4 or more. A single pixel may include varying numbers of triangular subpixels. For example, a single pixel may include 3, 6, 9, 12, 15, 18, 21 or some other number of triangular subpixels. Alternatively, a single pixel may include 4, 8, 12, 16, 20, or some other number of triangular subpixels. A single pixel may include triangular subpixels that are configured to be separately addressable and/or triangular subpixels are configured to be addressable as a group.

Abstract: At least some subpixels in an interferometric modulator display are formed in a triangular shape. Such triangular subpixels may be formed and/or addressed in a variety of manners. At least some individual triangular subpixels may be separately addressable. However, a plurality of triangular subpixels may be addressable as a group, e.g., as a group of 2, 3, 4 or more. A single pixel may include varying numbers of triangular subpixels. For example, a single pixel may include 3, 6, 9, 12, 15, 18, 21 or some other number of triangular subpixels. Alternatively, a single pixel may include 4, 8, 12, 16, 20, or some other number of triangular subpixels. A single pixel may include triangular subpixels that are configured to be separately addressable and/or triangular subpixels are configured to be addressable as a group.

Abstract: A system and method for manufacturing and wafer-level testing properties of a wafer comprises a chuck receiving a wafer to be tested and a pump light source directing an output beam toward selected locations on a wafer received on the chuck in combination with a laser light detector detecting light emitted from the wafer and a pump beam aiming mechanism selectively varying a position at which the pump light source output beam enters the wafer.

Abstract: A system and method for manufacturing and wafer-level testing properties of a wafer comprises a chuck receiving a wafer to be tested and a pump light source directing an output beam toward selected locations on a wafer received on the chuck in combination with a laser light detector detecting light emitted from the wafer and a pump beam aiming mechanism selectively varying a position at which the pump light source output beam enters the wafer.

Abstract: A method and device for wafer level testing of semiconductor lasers allows probing from one side while detecting light output from the opposite side. A chuck with a transparent substrate receives the optical aperture side of a wafer of semiconductor lasers. The wafer is probed form the side opposite the side contacting the chuck and emitted light is detected on a side of the chuck opposite the side contacting the wafer.

Abstract: A method and device for wafer level testing of semiconductor lasers allows probing from one side while detecting light output from the opposite side. A chuck with a transparent substrate receives the optical aperture side of a wafer of semiconductor lasers. The wafer is probed form the side opposite the side contacting the chuck and emitted light is detected on a side of the chuck opposite the side contacting the wafer.