Abstract: The present disclosure relates to a device that includes a silicon layer, a dielectric layer having a thickness, a self-assembled monolayer (SAM) having a thickness, and a layer constructed of a semiconductor, where the dielectric layer is positioned between the SAM and the silicon layer and the SAM is positioned between the layer comprising the semiconductor and the silicon layer. The SAM includes a plurality of imperfections that pass through the thickness of the SAM, the dielectric layer includes a plurality of holes that pass through at least a portion of the thickness of the dielectric layer, and the imperfections and the holes are substantially aligned to form a plurality of continuous channels and at least a portion of the channels are at least partially filled with the semiconductor, such that the channels are capable of charge transport between the silicon layer and the layer comprising the semiconductor.

Abstract: Described herein are photovoltaic devices and methods which utilize femtosecond (fs) lasers to create a glass/glass weld, hermetically encapsulating photovoltaic devices that provide both reduced cost and increased cell life and efficiency. For example, glass/glass welds can reduce manufacturing time and costs, increase cell life by removing encapsulant failure which is a leading cause of cell degradation and provide for increased optical properties, which improves cell efficiency.

Abstract: The present disclosure relates to a wafer that includes a silicon core having a textured surface and a dielectric layer having a first thickness, where the textured surface includes a plurality of features where each feature is characterized by a first point and a second point separated by a distance, H, at least a portion of the features further include a solid channel positioned substantially at or near the first point, and the solid channel passes through at least a portion of the first thickness.

Abstract: The present disclosure relates to a method that includes depositing a first layer onto a substrate, depositing a second layer onto a surface of the first layer, and separating the substrate from the second layer, where the substrate includes a first III-V alloy, the second layer includes second III-V alloy, and the first layer includes a material that includes at least two of a Group 1A element, a Group 2A element, a Group 6A element, and/or a halogen.

Abstract: The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.

Abstract: The present disclosure relates to a method that includes depositing a first layer onto a substrate, depositing a second layer onto a surface of the first layer, and separating the substrate from the second layer, where the substrate includes a first III-V alloy, the second layer includes second III-V alloy, and the first layer includes a material that includes at least two of a Group 1A element, a Group 2A element, a Group 6A element, and/or a halogen.

Abstract: PolySi:Ga/SiO2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.

Abstract: The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.

Abstract: Methods and systems for thermal energy storage and enhanced oil recovery are described herein. In some embodiments, natural gas may be injected down a well which has been previously hydraulically fractured to store thermal energy and to stimulate the well to greater hydrocarbon production.

Abstract: Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Abstract: Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

Abstract: Methods and systems for thermal energy storage and enhanced oil recovery are described herein. In some embodiments, natural gas may be injected down a well which has been previously hydraulically fractured to store thermal energy and to stimulate the well to greater hydrocarbon production.

Abstract: Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

Abstract: Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Abstract: PolySi:Ga/SiO2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.