Abstract: A method of selective metallization of high temperature semiconductors to produce ohmic or rectifying contacts includes modification of the surface of a high temperature semiconductor material and thereafter depositng metal thereon by chemical vapor deposition. The method includes a lithographic step to define the area on the semiconductor surface where the CVD material is to be deposited. Thereafter, a beam of refractory metal ions is directed onto the defined area to damage the semiconductor material surface so that it will react with CVD gases. The contact metal is then deposited on the damaged surface by chemical vapor deposition, so that the metal seeds on the damaged exposed surface of the semiconductor to permit direct formation of metallization on that surface.