Abstract: A circuit for protecting a metal oxide semiconductor (MOS) device is configured to hold down or pull down a voltage at a gate of the protected MOS device during an electrostatic discharge (ESD) event. The circuit includes at least one active device or capacitance-providing element connected to the gate of the protected MOS device, configured to pull down or hold down the voltage at the gate of the protected MOS device when the ESD event occurs.

Abstract: A circuit for protecting a metal oxide semiconductor (MOS) device is configured to hold down or pull down a voltage at a gate of the protected MOS device during an electrostatic discharge (ESD) event. The circuit includes at least one active device or capacitance-providing element connected to the gate of the protected MOS device, configured to pull down or hold down the voltage at the gate of the protected MOS device when the ESD event occurs.

Abstract: An electrostatic discharge protection device with a high trigger current includes a semiconductor layer, a well region formed in the semiconductor layer, an anode region formed in the well region, a cathode region formed in the semiconductor layer, a bridging region bridging a junction between the semiconductor layer and the well region, and a heavily doped P-region encircling the cathode region.

Abstract: An ESD protection device with a low trigger voltage includes a semiconductor layer, a lightly doped well region formed in the semiconductor layer, a highly doped anode region formed in the well region, a highly doped cathode region formed in the semiconductor layer, a highly doped bridging region bridging a junction between the semiconductor layer and the well region, and a highly doped channel stop region of formed in semiconductor layer between the cathode region and the bridging region. The trigger voltage may be adjusted over a range of voltages, and the ESD protection devices may be connected in parallel in order to be effective in very high current situations.

Abstract: A system and method for dynamically protecting a vulnerable device from an ESD event includes an ESD event sensor and a breakdown voltage adjustment circuit. The ESD event sensor detects an ESD event and provides a signal to the breakdown voltage adjustment circuit indicating that an ESD event has occurred. The breakdown voltage adjustment circuit receives the signal from the ESD event sensor and adjusts the breakdown voltage of the vulnerable device during the ESD event.