Abstract: An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

Abstract: An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

Abstract: An image sensor includes an image sensing portion for receiving incident light that is converted to a plurality of charge packets; a transfer mechanism for transferring the charge packets from the image sensing portion; and an output structure that receives the charge packets from the transfer mechanism for transporting output signals from the image sensor, wherein the output structure comprises a transparent conductor for a gate electrode gate.

Abstract: A process is described to eliminate the re-entrant profile in double polysilicon gate structures commonly used in VLSI microelectronic devices such as CCDs is eliminated by depositing a conformal insulating layer (5) on the poly-oxide layer (4), plasma etching to form spacer (6), oxidizing gate electrode (3) and substrate (10 to form oxide layer (7), and forming overlapping second gate electrode (8).