Abstract: A semiconductor structure and a method of forming the same using replacement gate processes are provided. The semiconductor structure includes a butted contact coupling a source/drain region, or a silicide on the source/drain region, of a first transistor and a gate extension. The semiconductor structure further includes a contact pad over the source/drain region of the first transistor and electrically coupled to the source/drain region. The addition of the contact pad reduces the contact resistance and the possibility that an open circuit is formed between the butted contact and the source/drain region. The contact pad preferably has a top surface substantially leveled with a top surface of the gate extension.