Abstract: A hip stem centralizer and method are provided for positioning a proximal portion of a femoral hip stem component at a desired radial position within an intramedullary canal of a femur. The hip stem centralizer includes a resilient opening that is elastically compressed upon receiving the hip stem to bias the hip stem to a desired position in the intramedullary canal.

Abstract: The present invention provides a positioner for controlling the position of a femoral hip implant within the intramedullary canal of a femur.

Abstract: A tool for releasably gripping an orthopedic implant. The tool includes a first gripping member which may be a threaded shaft and a second gripping member which may be the tool body. The first gripping member has a gripping end engageable with the implant and secures the implant to the tool with a bearing surface located on the distal end of the tool engaging the implant. The distal end may also include a feature to rotationally engage the implant and resist relative rotational movement between the tool and implant. A release mechanism is provided which, when the implant is secured to the tool, is operable to release the gripping members from their relative positions and retract the bearing surface from the implant. The first gripping member which then only loosely engages the implant may be completely disengaged from the implant. The release mechanism may be a pivoting lever body.

Abstract: An orthopaedic implant is forged from a metallic body consisting of a cobalt-chromium alloy. The forged implant is descaled by blasting the implant with a particulate blasting agent at a momentum which is sufficient to remove scale formed on the implant during the forging step but insufficient to otherwise cause major structural surface deformation to the implant. The descaled implant is electro-chemical polished by submersing the implant in an acid bath having a temperature of between approximately 80.degree. F. and 90.degree. F. The acid bath includes approximately 45% sulfuric acid and 50% phosphoric acid. Direct current electrical power ranging between approximately 10 volts D.C. and 13 volts D.C. is applied to the implant. The polished implant is ultrasonically cleaned. The implant is inspected with a fluorescent penetrant to determine whether surface defects exist in the implant.