Abstract: A finger-mounted device may include finger-mounted units. The finger-mounted units may each have a body that serves as a support structure for components such as force sensors, accelerometers, and other sensors and for haptic output devices. The body may have sidewall portions coupled by a portion that rests adjacent to a user's fingernail. The body may be formed from deformable material such as metal or may be formed from adjustable structures such as sliding body portions that are coupled to each other using magnetic attraction, springs, or other structures. The body of each finger-mounted unit may have a U-shaped cross-sectional profile that leaves the finger pad of each finger exposed when the body is coupled to a fingertip of a user's finger. Control circuitry may gather finger press input, lateral finger movement input, and finger tap input using the sensors and may provide haptic output using the haptic output device.

Abstract: A method for reducing gap-drive wear while employing a variable-gap plasma processing chamber for etching at least partially through a Si3N4 layer disposed on a substrate. The method includes introducing the substrate into the variable-gap plasma processing chamber while a gap between an upper surface of the substrate and an upper electrode of the variable-gap plasma processing chamber is maintained at a predefined gap distance. The method further includes flowing an etchant source gas comprising CF4 and O2 into the variable gap plasma processing chamber. There is further included etching the Si3N4 layer with a plasma struck from the etchant source gas while maintaining the gap at substantially the predefined gap distance.

Abstract: A method in a variable-gap plasma processing chamber for controlled removal of at least a portion of an upper crust of a photoresist layer disposed above a substrate. The upper crust represents a hardened upper layer of the photoresist layer. The method includes loading the substrate into the variable-gap plasma processing chamber. The method further includes flowing an ash source gas comprising O.sub.2 into the variable-gap plasma processing chamber. The ash source gas is substantially free of an O.sub.2 bombarding gas. The method further includes performing the controlled removal of at least the portion of the upper crust of the photoresist layer with a plasma struck from the ash source gas while a gap between an upper surface of the substrate and an upper electrode of the variable-gap plasma processing chamber is maintained at a predefined wide gap distance.