Patents by Inventor David M. Fanning

David M. Fanning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers
    Patent number: 6697412
    Abstract: A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.
    Type: Grant
    Filed: April 13, 2001
    Date of Patent: February 24, 2004
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Edward A. Beam, III, Gary A. Evans, Paul Saunier, Ming-Yih Kao, David M. Fanning, William H. Davenport, Andy Turudic, Walter A. Wohlmuth
  • Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers
    Publication number: 20020150137
    Abstract: A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.
    Type: Application
    Filed: April 13, 2001
    Publication date: October 17, 2002
    Inventors: Edward A. Beam, Gary A. Evans, Paul Saunier, Ming-Yih Kao, David M. Fanning, William H. Davenport, Andy Turudic, Walter A. Wohlmuth