Patents by Inventor David M. Feldmann

David M. Feldmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8633472
    Abstract: Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: January 21, 2014
    Assignee: Los Alamos National Security, LLC
    Inventors: Lev Boulaevskii, David M. Feldmann, Quanxi Jia, Alexei Koshelev, Nathan A. Moody
  • Publication number: 20110111964
    Abstract: A simplified architecture for a superconducting coated conductor is provided and includes a substrate, a layer of titanium nitride directly upon the substrate, the layer of titanium nitride deposited by ion beam assisted deposition (IBAD), a layer of a buffer material having chemical and structural compatibility with said layer of titanium nitride, the buffer material layer directly upon the IBAD-titanium nitride layer, and a layer of a high temperature superconductive material such as YBCO.
    Type: Application
    Filed: August 4, 2010
    Publication date: May 12, 2011
    Inventors: Quanxi Jia, Vladimir Matias, Alp T. Findikoglu, David M. Feldmann
  • Publication number: 20110062423
    Abstract: Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.
    Type: Application
    Filed: September 14, 2009
    Publication date: March 17, 2011
    Applicant: LOS ALAMOS NATIONAL SECURITY, LLC
    Inventors: Lev Boulaevskii, David M. Feldmann, Quanxi Jia, Alexei Koshelev, Nathan A. Moody
  • Publication number: 20110045984
    Abstract: A composition of matter including a thin film of a high temperature superconductive oxide having particles randomly dispersed therein, the particles of an yttrium-barium-ruthenium oxide or of an yttrium-barium-niobium oxide is provided.
    Type: Application
    Filed: August 5, 2010
    Publication date: February 24, 2011
    Inventors: Terry G. Holesinger, David M. Feldmann