Patents by Inventor David M. Heinz

David M. Heinz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4189521
    Abstract: M-type hexagonal ferrites whose prototype chemical formula (BaFe.sub.12 O.sub.19) contains no zinc and W-type hexagonal ferrites whose prototype chemical formula is (BaZn.sub.2 Fe.sub.16 O.sub.27) can be successfully grown by LPE on spinel substrates having appropriate lattice parameters when controlled quantities of the zinc are present in the melts from which these hexagonal ferrites are grown. Using this growth technique, composites comprising a monocrystalline magnetic M-type or W-type hexagonal ferrite film on a non-magnetic single crystalline spinel substrate are provided.
    Type: Grant
    Filed: July 5, 1977
    Date of Patent: February 19, 1980
    Assignee: Rockwell International Corporation
    Inventors: Howard L. Glass, Frederick S. Stearns, David M. Heinz
  • Patent number: 4093781
    Abstract: A new magnetic microwave composite, a smooth monocrystalline substituted lithium ferrite (Li.sub.1-x Na.sub.x Fe.sub.5 O.sub.8) film on a monocrystalline magnesium oxide substrate is disclosed. Lithium ferrite films may be epitaxially grown on magnesium oxide substrates with excellent lattice matching by partial substitution of sodium for the lithium to increase the lattice constant of the lithium ferrite to match that of magnesium oxide.
    Type: Grant
    Filed: May 27, 1975
    Date of Patent: June 6, 1978
    Assignee: Rockwell International Corporation
    Inventors: David M. Heinz, Eugene C. Whitcomb
  • Patent number: 3995093
    Abstract: The invention is a substituted garnet bubble domain material in which lutecium and lanthanum have been substituted for yttrium. This material has a high growth-induced uniaxial anisotropy (K.sub.u.sup.G).
    Type: Grant
    Filed: March 3, 1975
    Date of Patent: November 30, 1976
    Assignee: Rockwell International Corporation
    Inventor: David M. Heinz
  • Patent number: 3982049
    Abstract: The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.
    Type: Grant
    Filed: July 15, 1974
    Date of Patent: September 21, 1976
    Assignee: Rockwell International Corporation
    Inventors: Jack E. Mee, Thomas N. Hamilton, John L. Archer, David M. Heinz
  • Patent number: 3946124
    Abstract: A composite consisting of multiple layer structures, the basic structure of which is a chemically vapor deposited film on a substrate wafer is, disclosed herein. The film is of material which is appropriate for creating therein single wall magnetic domains which are capable of being moved about in predetermined directions within the thickness of the film and in the plane of the film. Devices are adapted to the film for sensing the motion of these domains, thereby enabling application of these structures to circuits which may be particularly utilized in memory or logic applications. A complete family of film on substrate materials is fabricated through a unique process. One of the steps of the process relates to the establishment within a reactor of the exact location of the substrate upon which deposition of the film is to be made. This is done in order to obtain desired film characteristics. Included are provisions for making multiple film layers as a matrix of films and hence a multitude of such circuits.
    Type: Grant
    Filed: March 2, 1972
    Date of Patent: March 23, 1976
    Assignee: Rockwell International Corporation
    Inventors: Jack E. Mee, David M. Heinz, Thomas N. Hamilton, Paul J. Besser, George R. Pulliam