Patents by Inventor David M. Ishikawa

David M. Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10932323
    Abstract: A reactor for chemical vapor deposition is equipped with an IR radiation compensating susceptor assembly that supports one or more semiconductor substrates above linear IR heater lamps arranged in a parallel array. A set of primary IR radiation reflectors beneath the lamps directs IR radiation back toward the susceptor in a pattern selected to provide uniform IR irradiation of the susceptor assembly to thereby uniformly heat the substrates. Secondary IR shield reflectors may be provided in selected patterns on the underside of the susceptor assembly as a fine tuning measure to direct IR radiation away from the assembly in a controlled pattern. The combined IR radiation reflectors have an IR signature that compensates for any non-uniform heating profile created by the linear IR heater lamp array. The heating profile of the lamp array might also be tailored in order to reduce the amount of compensation required to be supplied by the IR reflectors.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: February 23, 2021
    Assignee: ALTA DEVICES, INC.
    Inventors: Brian Burrows, Abril Cabreros, David M. Ishikawa, Brian Brown, Alexander Lerner
  • Publication number: 20200291523
    Abstract: Multi-zone process kits for use in a deposition chamber are provided herein. In some embodiments, a multi-zone process kit includes a body having a plurality of deposition zones formed in the body; one or more gas injection conduits fluidly coupled to a first side of each of the plurality of deposition zones via a plurality of gas inlets; an exhaust conduit fluidly coupled to a second side of each of the plurality of deposition zones via a plurality of exhaust apertures; and a multi-zone heater having a plurality of heating zones, wherein one or more of the plurality of heating zones corresponds to each of the plurality of deposition zones.
    Type: Application
    Filed: June 2, 2017
    Publication date: September 17, 2020
    Inventors: David M. ISHIKAWA, Brian H. BURROWS
  • Publication number: 20170037515
    Abstract: A reactor for chemical vapor deposition is equipped with an IR radiation compensating susceptor assembly that supports one or more semiconductor substrates above linear IR heater lamps arranged in a parallel array. A set of primary IR radiation reflectors beneath the lamps directs IR radiation back toward the susceptor in a pattern selected to provide uniform IR irradiation of the susceptor assembly to thereby uniformly heat the substrates. Secondary IR shield reflectors may be provided in selected patterns on the underside of the susceptor assembly as a fine tuning measure to direct IR radiation away from the assembly in a controlled pattern. The combined IR radiation reflectors have an IR signature that compensates for any non-uniform heating profile created by the linear IR heater lamp array. The heating profile of the lamp array might also be tailored in order to reduce the amount of compensation required to be supplied by the IR reflectors.
    Type: Application
    Filed: August 3, 2015
    Publication date: February 9, 2017
    Applicant: ALTA DEVICES, INC.
    Inventors: Brian Burrows, Abril Cabreros, David M. Ishikawa, Brian Brown, Alexander Lerner