Abstract: This invention is related to the use of a volatile antimicrobial compound against pathogens. The volatile antimicrobial compounds provided include certain oxaborole compounds, for example benzoxaboroles. Delivery systems are provided to take advantage of the volatile nature of these antimicrobial compounds. The method and use disclosed can be combined with other volatile compounds.

Abstract: An authentication device is provided that authenticates an electronic device based on the responses from distinct types of physically unclonable functions. The authentication device receives a device identifier associated with the electronic device. It then sends one or more challenges to the electronic device. In response, the authentication device receives one or more responses from the electronic device, the one or more responses including characteristic information generated from two or more distinct types of physically unclonable functions in the electronic device.

Abstract: One feature pertains to generating a unique identifier for an electronic device by combining static random access memory (SRAM) PUFs and circuit delay based PUFs (e.g., ring oscillator (RO) PUFs, arbiter PUFs, etc.). The circuit delay based PUFs may be used to conceal either a challenge to, and/or response from, the SRAM PUFs, thereby inhibiting an attacker from being able to clone a memory device's response.

Abstract: Disclosed is a method for protecting message data. In the method, the message data is padded with padding bits generated based on a deterministic function performed on the message data. The padded message data is compressed to generate compressed data. A length of the compressed data is dependent on the padding bits. The compressed data is encrypted to generate encrypted message data.

Abstract: One feature provides a method for a client node to establish a session key with a group node by obtaining an epoch identity value associated with a current epoch, wherein obtaining the epoch identity value includes one of computing the epoch identity value based on a node real time or negotiating the epoch identity value with the group node, computing a restricted key using a shared secret key, the epoch identity value, and a group node identity associated with the group node, and executing a session key establishment protocol with the group node to derive the session key using the restricted key as a master key in the session key establishment protocol. The session key may be established between the group node and the client node even though communications between the group node and the central node is only intermittently available during the current epoch.

Abstract: An authentication device is provided that authenticates an electronic device based on the responses from distinct types of physically unclonable functions. The authentication device receives a device identifier associated with the electronic device. It then sends one or more challenges to the electronic device. In response, the authentication device receives one or more responses from the electronic device, the one or more responses including characteristic information generated from two or more distinct types of physically unclonable functions in the electronic device.

Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.

Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

Abstract: One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.

Abstract: One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.

Abstract: An entropy source and a random number (RN) generator are disclosed. In one aspect, a low-energy entropy source includes a magneto-resistive (MR) element and a sensing circuit. The MR element is applied a static current and has a variable resistance determined based on magnetization of the MR element. The sensing circuit senses the resistance of the MR element and provides random values based on the sensed resistance of the MR element. In another aspect, a RN generator includes an entropy source and a post-processing module. The entropy source includes at least one MR element and provides first random values based on the at least one MR element. The post-processing module receives and processes the first random values (e.g., based on a cryptographic hash function, an error detection code, a stream cipher algorithm, etc.) and provides second random values having improved randomness characteristics.

Abstract: Embodiments of the disclosure are directed to generating a random number. An embodiment of the disclosure passes a current from a read operation through a magnetic tunnel junction (MTJ) to cause a first magnetization orientation of a free layer to switch to a second magnetization orientation, the switch in magnetization orientation causing a change in a resistance of the MTJ, and periodically samples the resistance of the MTJ to generate a bit value for the random number.

Abstract: One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.

Abstract: One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.

Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.

Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

Abstract: One feature pertains to generating a unique identifier for an electronic device by combining static random access memory (SRAM) PUFs and circuit delay based PUFs (e.g., ring oscillator (RO) PUFs, arbiter PUFs, etc.). The circuit delay based PUFs may be used to conceal either a challenge to, and/or response from, the SRAM PUFs, thereby inhibiting an attacker from being able to clone a memory device's response.

Abstract: A random number generator system that utilizes a magnetic tunnel junction (MTJ) that is controlled by an STT-MTJ entropy controller that determines whether to proceed with generating random numbers or not by monitoring the health of the MTJ-based random number generator is illustrated. If the health of the random number generation is above a threshold, the STT-MTJ entropy controller shuts down the MTJ-based random number generator and sends a message to a requesting chipset that a secure key generation is not possible. If the health of the random number generation is below a threshold, the entropy controller allows the MTJ-based random number generator to generate random numbers based on a specified algorithm, the output of which is post processed and used by a cryptographic-quality deterministic random bit generator to generate a security key for a requesting chipset.

Abstract: Disclosed is a method for protecting message data. In the method, the message data is padded with padding bits generated based on a deterministic function performed on the message data. The padded message data is compressed to generate compressed data. A length of the compressed data is dependent on the padding bits. The compressed data is encrypted to generate encrypted message data.

Abstract: Embodiments of the disclosure are directed to generating a random number. An embodiment of the disclosure passes a current from a read operation through a magnetic tunnel junction (MTJ) to cause a first magnetization orientation of a free layer to switch to a second magnetization orientation, the switch in magnetization orientation causing a change in a resistance of the MTJ, and periodically samples the resistance of the MTJ to generate a bit value for the random number.