Abstract: The present invention provides a method and apparatus for determining cell-based timing elements based on a transistor-level circuit design. The method may include accessing information indicative of a transistor-level circuit design determining at least one component of at least one cell based on the information indicative of the transistor-level circuit design, and determining at least one time delay associated with the transistor-level circuit design based on said at least one component of at least one cell.

Abstract: The present invention provides a method and apparatus for characterizing a memory array. The method includes accessing information indicative of a transistor-level circuit design of a column of a memory array and determining at least one component of a cell representative of the column of the memory array based on the information indicative of the transistor-level circuit design and at least one timing rule for at least one signal associated with the column of the memory array. The method also includes determining at least one time delay associated with the cell based on the at least one component of at least one cell.

Abstract: An apparatus, method and system for performing a race analysis on an integrated circuit design which includes incorporating effects of on-chip transistor gate length (Lgate) and resistance variations into the race analysis and modeling on circuit performance while taking into account intra-chip transistor Lgate spatial variability.

Abstract: A method, system and computer program product for extracting parasitic resistance and capacitance values to simulate performance of an integrated circuit. A selected number of interconnections in an integrated circuit may be identified (“interconnections of interest”). A netlist containing a list of the transistors in the integrated circuit may be pruned by selecting those transistors in the netlist that are in the channel connected regions on the driving side of the interconnections of interest and those on the receiving side of the interconnections of interest. Parasitic resistance and capacitance values for layout layers connected to the interconnections of interest may be extracted. These extracted parasitic resistance and capacitance values may be associated with the transistors connected to those layout layers in the pruned netlist.

Abstract: A method, system and computer program product for extracting parasitic resistance and capacitance values to simulate performance of an integrated circuit. A selected number of interconnections in an integrated circuit may be identified (“interconnections of interest”). A netlist containing a list of the transistors in the integrated circuit may be pruned by selecting those transistors in the netlist that are in the channel connected regions on the driving side of the interconnections of interest and those on the receiving side of the interconnections of interest. Parasitic resistance and capacitance values for layout layers connected to the interconnections of interest may be extracted. These extracted parasitic resistance and capacitance values may be associated with the transistors connected to those layout layers in the pruned netlist.