Patents by Inventor David M. Tiede

David M. Tiede has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10273593
    Abstract: An electrochemical cell that allows for in-situ structural characterization of amorphous thin film materials during the course of electrolysis using high-energy X-ray scattering (>50 keV). The compact and versatile cell employs a three-electrode configuration and minimizes X-ray scattering contributions from the cell, reference and counter electrodes, as well as the working electrode support. A large surface area working electrode has a physically robust support and is largely transparent to X-rays. This design, which utilizes a three-dimensional working electrode, also greatly improves the intensity and quality of the scattered signal compared to a two-dimensional working electrode. The in-situ cell can be used not only to investigate structural evolution during electrolysis using X-ray scattering (e.g. pair distribution function), but also to perform electrochemical potential-dependent structural analysis by extended X-ray absorption fine structure.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: April 30, 2019
    Assignee: UChicago Argonne, LLC
    Inventors: Gihan Kwon, Jonathan D. Emery, In Soo Kim, Alex B. Martinson, David M. Tiede
  • Publication number: 20180031496
    Abstract: An electrochemical cell that allows for in-situ structural characterization of amorphous thin film materials during the course of electrolysis using high-energy X-ray scattering (>50 keV). The compact and versatile cell, fabricated using a 3D printer, employs a three-electrode configuration and minimizes X-ray scattering contributions from the cell, reference and counter electrodes, as well as the working electrode support. A large surface area working electrode has a physically robust support and is largely transparent to X-rays. This design, which utilizes a three-dimensional working electrode, also greatly improves the intensity and quality of the scattered signal compared to a two-dimensional working electrode. The in-situ cell can be used not only to investigate structural evolution during electrolysis using X-ray scattering (e.g. pair distribution function), but also to perform electrochemical potential-dependent structural analysis by extended X-ray absorption fine structure.
    Type: Application
    Filed: July 27, 2016
    Publication date: February 1, 2018
    Applicant: UChicago Argonne, LLC
    Inventors: Gihan Kwon, Jonathan D. Emery, In Soo Kim, Alex B. Martinson, David M. Tiede
  • Patent number: 6537575
    Abstract: A mixture is provided which manifests a gel phase at a temperature higher than that in which the mixture manifests a liquid phase. The mixture is a combination of a lipid, a polymer-grafted phospholipid and a surfactant. It is biomimetic in nature and changes phases when subjected to one or a plurality of environmental stimuli.
    Type: Grant
    Filed: July 28, 2000
    Date of Patent: March 25, 2003
    Assignee: The University of Chicago
    Inventors: Millicent A. Firestone, David M. Tiede
  • Patent number: 6410935
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: June 25, 2002
    Assignee: Argonne National Laboratory
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer
  • Publication number: 20020047180
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Application
    Filed: May 16, 2001
    Publication date: April 25, 2002
    Applicant: Argonne National Laboratory
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer
  • Patent number: 6271130
    Abstract: An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: August 7, 2001
    Assignee: The University of Chicago
    Inventors: Tijana Rajh, Natalia Meshkov, Jovan M. Nedelijkovic, Laura R. Skubal, David M. Tiede, Marion Thurnauer