Abstract: The present invention describes the activity of a dicot wound inducible promoter in a monocot plant, the use of a monocot intron to enhance the activity of a dicot promoter in a transgenic monocot, and genetic constructs to introduce an exogenous genetic trait into a monocot plant using a wound inducible dicot promoter system.

Abstract: The present invention describes the genomic nucleotide sequence of, and isolation of a strong intron-dependent promoter for, rice actin genes.

Abstract: A toy vehicle includes a body supporting a pair of rear wheels and a pivotally secured lower jaw portion supporting a pair of front wheels. The vehicle further includes a pair of pivotally secured pincers movable between a rearward or closed position and a forwardly extending or open position. Each pincer is coupled to a gear portion which in turn is coupled to one side of a two-sided gear rack movable within the vehicle body in response to a pivoting actuator. As the actuator is pivoted, the gear rack is driven forwardly or rearwardly to cause pivotal motion of the pincers. A resilient body is secured to the vehicle body and includes a plurality of flexible tubular tentacles which extend from the resilient body and are coupled to each of the pincers. As a result, the toy vehicle is configured in a relatively standard appearance closed position or a monster-like alternate configuration as the actuator is moved between alternative positions.

Abstract: A method for either block- or bit-erasing is described for an array of EEPROM cells, each having transistor channel regions with subchannels thereof respectively controlled by a floating gate conductor and a control gate. Erasing occurs through a Fowler-Nordheim tunnel window (34) between a source bit line (24) and a floating gate conductor (42) of a selected cell. For one or more selected cells, first and second erasing voltages are selected such that the selected source bit line (24) is more positive than the selected word line (48) by a voltage sufficient to cause excess electrons on the floating gate conductor (42) to be drawn through the tunnel window (34) to the source region (24). The nonselected word lines (48) have a nonerasing voltage impressed thereon that is sufficiently close to that of selected source regions that no erase disturb will occur in nonselected cells.

Abstract: An electrically programmable memory cell of a type having a source, a drain, a floating gate and a control gate formed over a face of a semiconductor substrate in which a ring region of material doped similarly to the substrate encloses the source, drain and gates and extends to a surface of the substrate around its length. Drain and source coupling regions of material doped oppositely to the substrate contact the drain and source, respectively, within the ring and extend under the ring to the substrate surface outside of the ring defining drain and source contact regions, respectively. A contact outside the ring to the control gate is provided by a gate coupling region also extending under the ring to a substrate surface on either side thereof. An interconnect couples the floating gate to the gate coupling region. A non-light transmitting, electrically conducting shield extends over the cell contacting the ring region around its periphery at the substrate surface.