Abstract: In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.

Abstract: Systems and methods are disclosed for reducing reset noise in an image sensor. Voltage on the column read out is sensed during reset. When the voltage reaches a desired threshold level, a voltage is asserted on the column read out line that turns off the reset transistor. Using column circuitry to turn off the reset transistor may be used to reduce noise associated with the reset switch. In example embodiments, a comparator may be included on each column line to determine when the threshold voltage has been reached and to trigger the assertion of the turn off voltage on the column line.

Abstract: In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.

Abstract: In various embodiments, an image sensor and related method are disclosed. In an embodiment, an image sensor includes an optically sensitive material, and a pixel circuit including a sense node in electrical communication with the optically sensitive material. The pixel circuit stores an electrical signal proportional to an intensity of light incident on the optically sensitive material during an integration period. The pixel circuit includes a differential transistor pair in electrical communication with the optically sensitive material. The differential transistor pair includes a first transistor and a second transistor, with the first transistor being disposed between the optically sensitive material and the sense node.

Abstract: Systems and methods are disclosed for reducing reset noise in an image sensor. Voltage on the column read out is sensed during reset. When the voltage reaches a desired threshold level, a voltage is asserted on the column read out line that turns off the reset transistor. Using column circuitry to turn off the reset transistor may be used to reduce noise associated with the reset switch. In example embodiments, a comparator may be included on each column line to determine when the threshold voltage has been reached and to trigger the assertion of the turn off voltage on the column line.

Abstract: Systems and methods are disclosed for reducing reset noise in an image sensor. Voltage on the column read out is sensed during reset. When the voltage reaches a desired threshold level, a voltage is asserted on the column read out line that turns off the reset transistor. Using column circuitry to turn off the reset transistor may be used to reduce noise associated with the reset switch. In example embodiments, a comparator may be included on each column line to determine when the threshold voltage has been reached and to trigger the assertion of the turn off voltage on the column line.

Abstract: In various embodiments, an image sensor and related method are disclosed. In an embodiment, an image sensor includes an optically sensitive material, and a pixel circuit including a sense node in electrical communication with the optically sensitive material. The pixel circuit stores an electrical signal proportional to an intensity of light incident on the optically sensitive material during an integration period. The pixel circuit includes a differential transistor pair in electrical communication with the optically sensitive material. The differential transistor pair includes a first transistor and a second transistor, with the first transistor being disposed between the optically sensitive material and the sense node.

Abstract: Systems and methods are disclosed for reducing reset noise in an image sensor. Voltage on the column read out is sensed during reset. When the voltage reaches a desired threshold level, a voltage is asserted on the column read out line that turns off the reset transistor. Using column circuitry to turn off the reset transistor may be used to reduce noise associated with the reset switch. In example embodiments, a comparator may be included on each column line to determine when the threshold voltage has been reached and to trigger the assertion of the turn off voltage on the column line.

Abstract: The manufacturing yield of an A/D converter semiconductor chip is significantly increased by utilizing a number of A/D converter circuits that include a group of redundant A/D converter circuits. As a result, the semiconductor chip can be wired to form a “good” A/D converter semiconductor chip as long as the number of “bad” A/D converter circuits does not exceed the number of redundant A/D converter circuits.

Abstract: The power consumed by a positron emission tomography (PET) imaging system is substantially reduced by utilizing an analog memory, such as a switch-capacitor analog memory, to sample and store analog values for a number of gamma ray signals so that only the stored analog values that represent pairs of gamma rays with coincident emission and vectors that are opposite to each other are digitized. In addition, the digitization is performed at a much slower clock frequency.

Abstract: The power consumed by a positron emission tomography (PET) imaging system is substantially reduced by utilizing an analog memory, such as a switch-capacitor analog memory, to sample and store analog values for a number of gamma ray signals so that only the stored analog values that represent pairs of gamma rays with coincident emission and vectors that are opposite to each other are digitized. In addition, the digitization is performed at a much slower clock frequency.

Abstract: The manufacturing yield of an A/D converter semiconductor chip is significantly increased by utilizing a number of A/D converter circuits that include a group of redundant A/D converter circuits. As a result, the semiconductor chip can be wired to form a “good” A/D converter semiconductor chip as long as the number of “bad” A/D converter circuits does not exceed the number of redundant A/D converter circuits.

Abstract: The reduced signal-to-noise ratio of colored pixels that results from a lower conversion efficiency is eliminated by utilizing a programmable gain amplifier which individually applies a gain to the output of each colored pixel so that the maximum signal level of each colored pixel is matched to the maximum input range of an A/D converter.