Abstract: Described is a method comprising: forming a magnet on a substrate or a template, the magnet having an interface; and forming a first layer of non-magnet conductive material on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ. Described is an apparatus comprising: a magnet formed on a substrate or a template, the magnet being formed under crystallographic, electromagnetic, or thermodynamic conditions, the magnet having an interface; and a first layer of non-magnet conductive material formed on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ.

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory devices and spin logic devices, wherein a strain engineered interface is formed within at least one magnet within these devices. In one embodiment, the spin transfer torque memory devices may include a free magnetic layer stack comprising a crystalline magnetic layer abutting a crystalline stressor layer. In another embodiment, the spin logic devices may include an input magnet, an output magnet; wherein at least one of the input magnet and the output magnet comprises a crystalline magnetic layer abutting crystalline stressor layer and/or the crystalline magnetic layer abutting a crystalline spin-coherent channel extending between the input magnet and the output magnet.

Abstract: Described is a method comprising: forming a magnet on a substrate or a template, the magnet having an interface; and forming a first layer of non-magnet conductive material on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ. Described is an apparatus comprising: a magnet formed on a substrate or a template, the magnet being formed under crystallographic, electromagnetic, or thermodynamic conditions, the magnet having an interface; and a first layer of non-magnet conductive material formed on the interface of the magnet such that the magnet and the layer of non-magnet conductive material are formed in-situ.

Abstract: Embodiments of the present disclosure are directed towards metallization of a fluorocarbon-based dielectric material for interconnect applications. In one embodiment, an apparatus includes a semiconductor substrate, a device layer disposed on the semiconductor substrate, the device layer including one or more transistor devices, and an interconnect layer disposed on the device layer, the interconnect layer comprising a fluorocarbon-based dielectric material, where x represents a stoichiometric quantity of fluorine relative to carbon in the dielectric material, and one or more interconnect structures configured to route electrical signals to or from the one or more transistor devices, the one or more interconnect structures comprising cobalt (Co), or ruthenium (Ru), or combinations thereof. Other embodiments may be described and/or claimed.