Patents by Inventor David Mocatta

David Mocatta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for synthesizing a semiconducting nanosized material
    Patent number: 11873434
    Abstract: The present invention relates to a method for synthesizing a semiconducting nanosized material.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: January 16, 2024
    Assignee: MERCK PATENT GMBH
    Inventors: Inbal Davidi, Amir Holtzman, Alex Irzh, David Mocatta, Elizaveta Kossoy, Sanaa Khalil, Denis Glozman
  • Method for synthesizing a semiconducting nanosized material
    Patent number: 11542432
    Abstract: The present invention relates to a method for synthesizing a semiconducting nanosized material.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: January 3, 2023
    Assignee: MERCK PATENT GMBH
    Inventors: David Mocatta, Amir Holtzman, Inbal Davidi, Shany Neyshtadt
  • Method for synthesizing a semiconducting nanosized material
    Publication number: 20220259495
    Abstract: The present invention relates to a method for synthesizing a semiconducting nanosized material.
    Type: Application
    Filed: April 30, 2020
    Publication date: August 18, 2022
    Applicant: Merck Patent GmbH
    Inventors: Inbal DAVIDI, Amir HOLTZMAN, Alex IRZH, David MOCATTA, Elizaveta KOSSOY, Sanaa KHALIL, Denis GLOZMAN
  • METHOD FOR SYNTHESIZING A SEMICONDUCTING NANOSIZED MATERIAL
    Publication number: 20200102494
    Abstract: The present invention relates to a method for synthesizing a semiconducting nanosized material.
    Type: Application
    Filed: May 22, 2018
    Publication date: April 2, 2020
    Applicant: MERCK PATENT GMBH
    Inventors: David MOCATTA, Amir HOLTZMAN, Inbal DAVIDI, Shany NEYSHTADT
  • SEMICONDUCTOR NANOSIZED MATERIAL
    Publication number: 20190382656
    Abstract: The present invention relates to a method for synthesizing a semiconductor material.
    Type: Application
    Filed: February 7, 2018
    Publication date: December 19, 2019
    Applicant: MERCK PATENT GMBH
    Inventors: David MOCATTA, Amir HOLTZMAN, Nina LIDICH, Yael NISENHOLZ
  • Heavily doped semiconductor nanoparticles
    Patent number: 9543385
    Abstract: Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: January 10, 2017
    Assignees: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD., RAMOT AT TEL-AVIV UNIVERSITY LTD.
    Inventors: Guy Cohen, Oded Millo, David Mocatta, Eran Rabani, Uri Banin
  • HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES
    Publication number: 20130299772
    Abstract: Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.
    Type: Application
    Filed: February 14, 2012
    Publication date: November 14, 2013
    Applicants: RAMOT AT TEL-AVIV UNIVERSITY LTD., YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
    Inventors: Guy Cohen, Oded Millo, David Mocatta, Eran Rabani, Uri Banin