Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.

Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.

Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.

Abstract: An insertion apparatus for use with a rotary machine includes a body extending from an insertion end to a steering end and sized to fit within an annular cavity. The body has a first stiffness and curves along a circumference of the annular cavity as the insertion end travels through the annular cavity. The insertion apparatus also includes a stiffener coupled to the body and extending from the steering end to the insertion end. The stiffener has a second stiffness greater than the first stiffness. The insertion apparatus further includes at least one maintenance device coupled to the insertion end of the insertion apparatus and a displacement mechanism configured to adjust a position of the at least one maintenance device relative to the body.

Abstract: A downhole dynamometer for a rod pumping unit is provided. The downhole dynamometer includes a shell within which a plurality of sensors, a non-transitory memory, and a dynamometer controller are located. The shell is configured to be coupled to a sucker rod string of the rod pumping unit and disposed in a well opposite a wellhead of the well. The plurality of sensors is configured to measure downhole accelerations of the sucker rod string and to measure a downhole load on the sucker rod string. The dynamometer controller is coupled to the plurality of sensors and the non-transitory memory. The dynamometer controller is configured to periodically collect measurements from the plurality of sensors and store the measurements in the non-transitory memory.

Abstract: A downhole dynamometer for a rod pumping unit is provided. The downhole dynamometer includes a shell within which a plurality of sensors, a non-transitory memory, and a dynamometer controller are located. The shell is configured to be coupled to a sucker rod string of the rod pumping unit and disposed in a well opposite a wellhead of the well. The plurality of sensors is configured to measure downhole accelerations of the sucker rod string and to measure a downhole load on the sucker rod string. The dynamometer controller is coupled to the plurality of sensors and the non-transitory memory. The dynamometer controller is configured to periodically collect measurements from the plurality of sensors and store the measurements in the non-transitory memory.

Abstract: A method of fabricating an overvoltage protection device and an over-voltage circuit protection device are provided. The over-voltage circuit protection device includes a plurality of transient voltage suppression (TVS) devices coupled in electrical parallel.

Abstract: An electronic packaging assembly having a semiconductor integrated circuit and a plurality of interconnect components is provided. The plurality of interconnect components is operatively coupled to the semiconductor integrated circuit. Further, one or more interconnect components include one or more support elements having a first surface and a second surface, and one or more spring elements having a first end and a second end, and wherein first ends of the one or more spring elements are coupled to the first surface or the second surface of a respective support element.

Abstract: An electronic packaging assembly having a semiconductor integrated circuit and a plurality of interconnect components is provided. The plurality of interconnect components is operatively coupled to the semiconductor integrated circuit. Further, one or more interconnect components include one or more support elements having a first surface and a second surface, and one or more spring elements having a first end and a second end, and wherein first ends of the one or more spring elements are coupled to the first surface or the second surface of a respective support element.

Abstract: A high temperature electronic system includes an electronics unit configured for exposure to an environment having a temperature greater than approximately 150.0° C. The remote electronics unit includes a transient voltage suppressor (TVS) assembly coupled in operative relationship with at least some electronic components of the electronics unit. The TVS assembly includes at least one TVS device comprising at least one of a punch-through wide band-gap semiconductor TVS die and an avalanche breakdown wide band-gap semiconductor TVS die encapsulated in a flip-chip package at least partially surrounding the die, and coupled to first and second electrodes exposed to a single side of the encapsulation.

Abstract: An apparatus includes a substrate and a plurality of conductive traces formed on the substrate. The conductive traces are doped with a concentration of an aluminum material forming a protective layer as a portion of the plurality of conductive traces to inhibit oxidation. A set of first metal contact pads are formed in contact with the plurality of conductive traces. The substrate, the plurality of conductive traces and the set of first metal contact pads define an electronic circuit board configured to operate at a temperature greater than 200 degrees Celsius. A high operating temperature electronic device is configured in electrical communication with the conductive traces defining an assembly configured to operate at a temperature greater than 200 degrees Celsius.

Abstract: A method of fabricating an overvoltage protection device and an over-voltage circuit protection device are provided. The over-voltage circuit protection device includes a plurality of transient voltage suppression (TVS) devices coupled in electrical parallel.

Abstract: A high temperature electronic system includes an electronics unit configured for exposure to an environment having a temperature greater than approximately 150.0° C. The remote electronics unit includes a transient voltage suppressor (TVS) assembly coupled in operative relationship with at least some electronic components of the electronics unit. The TVS assembly includes at least one TVS device comprising at least one of a punch-through wide band-gap semiconductor TVS die and an avalanche breakdown wide band-gap semiconductor TVS die encapsulated in a flip-chip package at least partially surrounding the die, and coupled to first and second electrodes exposed to a single side of the encapsulation.

Abstract: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The transient voltage suppressor (TVS) assembly includes a semiconductor die including a contact surface on a single side of the die, the die further including a substrate comprising a layer of at least one of an electrical insulator material, a semi-insulating material, and a first wide band gap semiconductor having a conductivity of a first polarity, at least a TVS device including a plurality of wide band gap semiconductor layers formed on the substrate; a first electrode coupled in electrical contact with the TVS device and extending to the contact surface, and a second electrode electrically coupled to the substrate extending to the contact surface.

Abstract: A diagnostic system for detecting faults in electrical wiring, and manufacturing method thereof is provided. The diagnostic system includes a diagnostic sensor coupled to a data acquisition system. The diagnostic sensor includes a sensor housing with a flexible coil sensor disposed inside. The sensor housing includes a base portion, lid portion, and a joining portion, wherein one end of the lid portion is detachably coupled to a first end of the base portion and another end of the lid portion is coupled to a second end of the base portion via the joining portion. The diagnostic sensor further includes a connector coupled to the flexible coil sensor.

Abstract: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

Abstract: An apparatus includes a substrate and a plurality of conductive traces formed on the substrate. The conductive traces are doped with a concentration of an aluminum material forming a protective layer as a portion of the plurality of conductive traces to inhibit oxidation. A set of first metal contact pads are formed in contact with the plurality of conductive traces. The substrate, the plurality of conductive traces and the set of first metal contact pads define an electronic circuit board configured to operate at a temperature greater than 200 degrees Celsius. A high operating temperature electronic device is configured in electrical communication with the conductive traces defining an assembly configured to operate at a temperature greater than 200 degrees Celsius.

Abstract: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

Abstract: A clearance sensing system for a rotating machine includes a plurality of sensor probes disposed within a stationary shroud of the rotating machine. Each of the plurality of sensor probes is adapted to measure a parameter indicative of an axial and a radial displacement of a rotating component within the shroud and to produce a signal that corresponds to the parameter. In certain embodiments, this parameter may include a capacitance between the rotating component and the sensor probe. The clearance sensing system further includes a circuit that receives the signal from each of the plurality of sensor probes and determines (a) the axial displacement of the rotating component within the shroud and (b) a radial displacement of the rotating component relative to the shroud.

Abstract: An electronic packaging assembly having a semiconductor integrated circuit and a plurality of interconnect components is provided. The plurality of interconnect components is operatively coupled to the semiconductor integrated circuit. Further, one or more interconnect components include one or more support elements having a first surface and a second surface, and one or more spring elements having a first end and a second end, and wherein first ends of the one or more spring elements are coupled to the first surface or the second surface of a respective support element.