Patents by Inventor David N. K. Wang
David N. K. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6040022Abstract: An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.Type: GrantFiled: April 14, 1998Date of Patent: March 21, 2000Assignee: Applied Materials, Inc.Inventors: Mei Chang, David N. K. Wang, John M. White, Dan Maydan
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Patent number: 5773100Abstract: An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film.Type: GrantFiled: November 6, 1996Date of Patent: June 30, 1998Assignee: Applied Materials, IncInventors: Mei Chang, David N. K. Wang, John M. White, Dan Maydan
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Patent number: 5354387Abstract: A composite BPSG insulating and planarizing layer is formed over stepped surfaces of a semiconductor wafer by a novel two step process. The composite BPSG layer is characterized by the absence of discernible voids and a surface which is resistant to loss of boron in a subsequent etching step. The two step deposition process comprises a first step to form a void-free BPSG layer by a CVD deposition using gaseous sources of phosphorus and boron dopants and tetraethylorthosilicate (TEOS) as the source of silicon; and then a second step to form a capping layer of BPSG by a plasma-assisted CVD deposition process while again using gaseous sources of phosphorus and boron dopants, and TEOS as the source of silicon, to provide a BPSG cap layer having a surface which is non-hygroscopic and resistant to loss of boron by subsequent etching.Type: GrantFiled: August 25, 1992Date of Patent: October 11, 1994Assignee: Applied Materials, Inc.Inventors: Peter W. Lee, David N. K. Wang, Makoto Nagashima, Kazuto Fukuma, Tetsuya Sato
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Patent number: 5354715Abstract: A high pressure, high throughout, single wafer semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature process for forming a highly conformal layer of silicon dioxide from a plasma of TEOS, oxygen and ozone is also disclosed. This layer can be planarized using an etchback process. Silicon oxide deposition and etchback can be carried out sequentially in the reactor.Type: GrantFiled: April 1, 1992Date of Patent: October 11, 1994Assignee: Applied Materials, Inc.Inventors: David N-K. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins, John A. Adamik, Ilya Perlov, Dan Maydan
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Patent number: 5300460Abstract: An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm.Type: GrantFiled: March 16, 1993Date of Patent: April 5, 1994Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, Chan-Lon Yang, David N. K. Wang, Dan Maydan
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Patent number: 5210466Abstract: A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.Type: GrantFiled: March 13, 1992Date of Patent: May 11, 1993Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, Chan-Lon Yang, David N. K. Wang, Dan Maydan
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Patent number: 5166101Abstract: A composite BPSG insulating and planarizing layer is formed over stepped surfaces of a semiconductor wafer by a novel two step process. The composite BPSG layer is characterized by the absence of discernible voids and a surface which is resistant to loss of boron in a subsequent etching step. The two step deposition process comprises a first step to form a void-free BPSG layer by a CVD deposition using gaseous sources of phosphorus and boron dopants and tetraethylorthosilicate (TEOS) as the source of silicon; and then a second step to form a capping layer of BPSG by a plasma-assisted CVD deposition process while again using gaseous sources of phosphorus and boron dpoants, and TEOS as the source of silicon, to provide a BPSG cap layer having a surface which is non-hygroscopic and resistant to loss of boron by subsequent etching.Type: GrantFiled: February 1, 1991Date of Patent: November 24, 1992Assignee: Applied Materials, Inc.Inventors: Peter W. Lee, David N. K. Wang, Makoto Nagashima, Kazuto Fukuma, Tetsuya Sato
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Patent number: 4854263Abstract: An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.Type: GrantFiled: August 14, 1987Date of Patent: August 8, 1989Assignee: Applied Materials, Inc.Inventors: Mei Chang, David N. K. Wang, John M. White, Dan Maydan