Patents by Inventor DAVID NEUMEYER

DAVID NEUMEYER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240079322
    Abstract: A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures horizontally extending in parallel in a first direction and horizontally separated from one another in a second direction by dielectric slot structures. At least one of the block structures comprises a stadium structure comprising opposing staircase structures each having steps comprising edges of the tiers, and conductive contact structures vertically extending to and in contact with at least some of the conductive structures at the steps, the conductive contact structures positioned proximate horizontal boundaries of the stadium structure in the second direction. Related memory devices, electronic systems, and methods are also described.
    Type: Application
    Filed: September 7, 2022
    Publication date: March 7, 2024
    Inventors: Darwin A. Clampitt, Shruthi Kumara Vadivel, David Neumeyer
  • Patent number: 11701804
    Abstract: A method for producing a part in the form of a solid block from a natural material in particulate form containing scleroproteins. A phase of heating the natural material, under compression at a pressure greater than or equal to 30 MPa, to a temperature greater than or equal to the denaturation temperature of the scleroproteins contained in the material. A phase of cooling the material thus obtained to a temperature less than 100° C., while maintaining the compression during at least a part of the cooling phase.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: July 18, 2023
    Assignees: AUTHENTIC MATERIAL, TOULOUSE TECH TRANSFER, INSTITUT NATIONAL POLYTECHNIQUE DE TOULOUSE, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, INSTITUT NATIONAL DE RECHERCHE POUR L'AGRICULTURE
    Inventors: Vincent Menny, Antoine Rouilly, Alain Couret, Dimitri Mazars, David Neumeyer, Virginie Vandenbossche, Jean Monchoux, Foad Naimi
  • Patent number: 11700729
    Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: July 11, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Yi Hu, Ramey M. Abdelrahaman, Narula Bilik, Daniel Billingsley, Zhenyu Bo, Joan M. Kash, Matthew J. King, Andrew Li, David Neumeyer, Wei Yeeng Ng, Yung K. Pak, Chandra Tiwari, Yiping Wang, Lance Williamson, Xiaosong Zhang
  • Publication number: 20220077169
    Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.
    Type: Application
    Filed: November 12, 2021
    Publication date: March 10, 2022
    Applicant: Micron Technology, Inc.
    Inventors: Yi Hu, Ramey M. Abdelrahaman, Narula Bilik, Daniel Billingsley, Zhenyu Bo, Joan M. Kash, Matthew J. King, Andrew Li, David Neumeyer, Wei Yeeng Ng, Yung K. Pak, Chandra Tiwari, Yiping Wang, Lance Williamson, Xiaosong Zhang
  • Patent number: 11205654
    Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.
    Type: Grant
    Filed: August 25, 2019
    Date of Patent: December 21, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Yi Hu, Ramey M. Abdelrahaman, Narula Bilik, Daniel Billingsley, Zhenyu Bo, Joan M. Kash, Matthew J. King, Andrew Li, David Neumeyer, Wei Yeeng Ng, Yung K. Pak, Chandra Tiwari, Yiping Wang, Lance Williamson, Xiaosong Zhang
  • Publication number: 20210057428
    Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.
    Type: Application
    Filed: August 25, 2019
    Publication date: February 25, 2021
    Applicant: Micron Technology, Inc.
    Inventors: Yi Hu, Ramey M. Abdelrahaman, Narula Bilik, Daniel Billingsley, Zhenyu Bo, Joan M. Kash, Matthew J. King, Andrew Li, David Neumeyer, Wei Yeeng Ng, Yung K. Pak, Chandra Tiwari, Yiping Wang, Lance Williamson, Xiaosong Zhang
  • Publication number: 20200316825
    Abstract: A method for producing a part in the form of a solid block from a natural material in particulate form containing scleroproteins. A phase of heating the natural material, under compression at a pressure greater than or equal to 30 MPa, to a temperature greater than or equal to the denaturation temperature of the scleroproteins contained in the material. A phase of cooling the material thus obtained to a temperature less than 100° C., while maintaining the compression during at least a part of the cooling phase.
    Type: Application
    Filed: October 19, 2018
    Publication date: October 8, 2020
    Inventors: VINCENT MENNY, ANTOINE ROUILLY, ALAIN COURET, DIMITRI MAZARS, DAVID NEUMEYER, VIRGINIE VANDENBOSSCHE, JEAN MONCHOUX, FOAD NAIMI