Abstract: Provided herein are exemplary embodiments of monolithic semiconductor structures having at least two lateral constructed semiconductor devices combined on a single semiconductor substrate.

Abstract: Provided herein, in accordance with one aspect of the present invention, are exemplary embodiments of semiconductor chips having low metallization series resistance. In one embodiment, the semiconductor chip comprises a semiconductor substrate and a metallization structure formed on the semiconductor substrate; an under bump metallurgy (“UBM”) structure layer formed over the metallization structure; and a bump formed over said UBM layer; wherein the largest linear dimension of said UBM layer is larger than the diameter of said bump.

Abstract: A cell phone has a plurality of interconnected electronic components for performing the electrical functions of the phone. A DC/DC converter provides an operating voltage which is applied to power supply terminals of the plurality of interconnected electronic components. The DC/DC converter uses a monolithic semiconductor device containing a power metal oxide semiconductor field effect transistor (MOSFET) and Schottky diode. The semiconductor device has the lateral diffused MOSFET formed on a surface of the semiconductor device. The MOSFET is formed with a plurality conduction fingers. The Schottky diode is also formed on the surface of the semiconductor device and integrated between the plurality of conduction fingers of the MOSFET. The drain of the MOSFET is connected to the anode of the diode on the surface of the monolithic semiconductor device.

Abstract: A chip-scale package houses a monolithic semiconductor die containing first and second lateral metal oxide semiconductor field effect transistors (MOSFETs) formed on a surface of the semiconductor die. The MOSFETs are formed using a lateral double diffused metal oxide semiconductor structure. The first MOSFET has a first conduction terminal coupled to a first package terminal and a second conduction terminal coupled to a second package terminal. The second MOSFET has a first conduction terminal coupled to a control terminal of the first MOSFET, a second conduction terminal coupled to a third package terminal, and a control terminal coupled to a fourth package terminal. A resistor is coupled between the first package terminal and the control terminal of the first MOSFET. A logic level enable signal controls the first MOSFET to enable the second MOSFET to connect a DC voltage from the first package terminal to the second package terminal.

Abstract: A semiconductor device that is comprised to two or more MOSFETs to form a bi-directional power switch.

Abstract: The interactive doll simulates the character of a live person or, in other embodiments a fantasy figure or animal, in essence, simulating a living being that possesses respective human or animal qualities: displaying specific needs, tenderness, intelligence and/or understanding. The doll contains a clock or other timekeeping device and thereby knows of the time of day. It automatically enters a sleep mode at a preset sleep time during which the playtoy remains quiet, and wakens at a preset hour of the day, issuing a verbal statement to let the player know it is time to again play. By issuing a sequence of verbal requests from time to time to the player to take action of various kinds on or with the doll, determines the player's compliance or noncompliance with each such request and issues a verbal message appropriate to such compliance or non-compliance.