Patents by Inventor David Osmond Melville
David Osmond Melville has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8880382Abstract: Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.Type: GrantFiled: January 18, 2012Date of Patent: November 4, 2014Assignee: International Business Machines CorporationInventors: Saeed Bagheri, Fook-Luen Heng, Rajiv Vasant Joshi, Kafai Lai, David Osmond Melville, Saibal Mukhopadhyay, Alan E Rosenbluth, Rama N. Singh, Kehan Tian
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Patent number: 8719735Abstract: Mask layout data of a lithographic mask includes polygons that each include horizontal and vertical edges. Each of a number of target edge pairs is defined by two edges of one or more of the polygons. A search box having a boundary coincident with a given edge of the edges of the polygons is specified. Whether the search box includes at least one edge of the edges of the polygons in addition to the given edge is determined. Where the search box includes at least one edge, at least one of the target edge pairs is specified as including the given edge and one of the at least one edge. For each target edge pair that has been specified, a manufacturability penalty value is determined. A dynamic manufacturability constraint table and a non-zero multiplier table are maintained.Type: GrantFiled: July 14, 2011Date of Patent: May 6, 2014Assignee: International Business Machines CorporationInventors: Masaharu Sakamoto, Alan E. Rosenbluth, Marc Alan Szeto-Millstone, Tadanobu Inoue, Kehan Tian, Andreas Waechter, Jonathan Lee, David Osmond Melville
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Patent number: 8682634Abstract: Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.Type: GrantFiled: September 13, 2012Date of Patent: March 25, 2014Assignee: International Business Machines CorporationInventors: Saeed Bagheri, Fook-Luen Heng, Rajiv Vasant Joshi, Kafai Lai, David Osmond Melville, Saibal Mukhopadhyay, Alan E Rosenbluth, Rama N. Singh, Kehan Tian
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Publication number: 20130185046Abstract: Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.Type: ApplicationFiled: September 13, 2012Publication date: July 18, 2013Applicant: International Business Machines CorporationInventors: Saeed Bagheri, Fook-Luen Heng, Rajiv Vasant Joshi, Kafai Lai, David Osmond Melville, Saibal Mukhopadhyay, Alan E. Rosenbluth, Rama N. Singh, Kehan Tian
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Publication number: 20130185045Abstract: Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.Type: ApplicationFiled: January 18, 2012Publication date: July 18, 2013Applicant: International Business Machines CorporationInventors: Saeed BAGHERI, Fook-Luen HENG, Rajiv Vasant JOSHI, Kafai LAI, David Osmond MELVILLE, Saibal MUKHOPADHYAY, Alan E. ROSENBLUTH, Rama N. SINGH, Kehan TIAN
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Patent number: 8448098Abstract: A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.Type: GrantFiled: April 23, 2012Date of Patent: May 21, 2013Assignee: International Business Machines CorporationInventors: Ying Liu, David Osmond Melville, Alan E Rosenbluth, Kehan Tian
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Publication number: 20130019211Abstract: Mask layout data of a lithographic mask includes polygons that each include horizontal and vertical edges. Each of a number of target edge pairs is defined by two edges of one or more of the polygons. A search box having a boundary coincident with a given edge of the edges of the polygons is specified. Whether the search box includes at least one edge of the edges of the polygons in addition to the given edge is determined. Where the search box includes at least one edge, at least one of the target edge pairs is specified as including the given edge and one of the at least one edge. For each target edge pair that has been specified, a manufacturability penalty value is determined. A dynamic manufacturability constraint table and a non-zero multiplier table are maintained.Type: ApplicationFiled: July 14, 2011Publication date: January 17, 2013Inventors: Masaharu Sakamoto, Alan E. Rosenbluth, Marc Alan Szeto-Millstone, Tadanobu Inoue, Kehan Tian, Andreas Waechter, Jonathan Lee, David Osmond Melville
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Patent number: 8266556Abstract: A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.Type: GrantFiled: August 3, 2010Date of Patent: September 11, 2012Assignee: International Business Machines CorporationInventors: Ying Liu, David Osmond Melville, Alan E Rosenbluth, Kehan Tian
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Publication number: 20120210281Abstract: A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.Type: ApplicationFiled: April 23, 2012Publication date: August 16, 2012Applicant: International Business Machines CorporationInventors: YING LIU, David Osmond Melville, Alan E. Rosenbluth, Kehan Tian
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Patent number: 8234603Abstract: The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate ?i of spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate ?i, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate ?i, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1.Type: GrantFiled: July 14, 2010Date of Patent: July 31, 2012Assignee: International Business Machines CorporationInventors: Saeed Bagheri, David L. DeMaris, Maria Gabrani, David Osmond Melville, Alan E. Rosenbluth, Kehan Tian
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Publication number: 20120036487Abstract: A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.Type: ApplicationFiled: August 3, 2010Publication date: February 9, 2012Applicant: International Business Machines CorporationInventors: YING LIU, David Osmond Melville, Alan E. Rosenbluth, Kehan Tian
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Publication number: 20120017194Abstract: The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate ?i spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate ?i, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate ?i, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1.Type: ApplicationFiled: July 14, 2010Publication date: January 19, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Saeed Bagheri, David L. DeMaris, Maria Gabrani, David Osmond Melville, Alan E. Rosenbluth, Kehan Tian