Abstract: Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.

Abstract: A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

Abstract: A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

Abstract: A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

Abstract: A method and apparatus for growing silicon carbide crystals is provided. The apparatus includes a sublimation chamber with a plurality of spaced apart dividers that can direct the direction of silicon carbide crystal growth into passages between the dividers to form a plurality of silicon carbide crystal plates. The silicon carbide crystal plates can be used as seed crystals in subsequent sublimation steps in a manner that promotes the growth of silicon carbide crystals in different crystallographic directions to thereby terminate defect formation.