Abstract: A pressure sensor includes a Wheatstone bridge circuit including a first resistor, a second resistor, a third resistor, and a fourth resistor having matching output characteristics. The pressure sensor further includes a first trim resistor in series with the Wheatstone bridge circuit, wherein the first trim resistor has output characteristics matching the output characteristics of the first resistor, the second resistor, the third resistor, and the fourth resistor of the Wheatstone bridge. The pressure sensor additionally includes a second trim resistor in parallel or a parallel loop with the Wheatstone bridge circuit, wherein the second trim resistor has output characteristics matching the output characteristics of the first resistor, the second resistor, the third resistor, and the fourth resistor of the Wheatstone bridge.

Abstract: A temperature sensor assembly for measuring a gas temperature in a gas flow stream includes a first substrate having a first surface configured to be connected to a thermally conductive structure in a gas path, a first temperature sensor mounted to the first substrate a first distance from the first surface, and a second temperature sensor mounted to the first substrate a second distance from the first surface. The second distance is less than the first distance. The first and second temperature sensors are arranged along a temperature gradient.

Abstract: A differential MEMS pressure sensor includes a topping wafer with a top side and a bottom side, a diaphragm wafer having a top side connected to the bottom side of the topping wafer and a bottom side, and a backing wafer having a top side connected to the bottom side of the diaphragm wafer and a bottom side. The topping wafer includes a first cavity formed in the bottom side of the topping wafer. The diaphragm wafer includes a diaphragm, a second cavity formed in the bottom side of the diaphragm wafer underneath the diaphragm, an outer portion surrounding the diaphragm, and a trench formed in the top side of the diaphragm wafer and positioned in the outer portion surrounding the diaphragm.

Abstract: A pressure sensor includes a housing, an isolator positioned at a first end of the housing, and a first cavity formed between the first end of the housing and the isolator. The pressure sensor further includes a second cavity formed in the housing and a channel with a first end fluidly connected to the first cavity and a second end fluidly coupled to the second cavity. A pressure sensor chip is positioned in the second cavity and includes a first diaphragm positioned at a top side of the pressure sensor chip laterally outwards from the second end of the channel to prevent a fluid from jetting onto the first diaphragm.

Abstract: A pressure sensor includes a Wheatstone bridge circuit including a first resistor, a second resistor, a third resistor, and a fourth resistor having matching output characteristics. The pressure sensor further includes a first trim resistor in series with the Wheatstone bridge circuit, wherein the first trim resistor has output characteristics matching the output characteristics of the first resistor, the second resistor, the third resistor, and the fourth resistor of the Wheatstone bridge. The pressure sensor additionally includes a second trim resistor in parallel or a parallel loop with the Wheatstone bridge circuit, wherein the second trim resistor has output characteristics matching the output characteristics of the first resistor, the second resistor, the third resistor, and the fourth resistor of the Wheatstone bridge.

Abstract: A microelectromechanical systems (MEMS) device includes a MEMS device body connected to a first mooring portion and a second mooring portion. The MEMS device body further includes a first cantilever and a second cantilever and connected by a spring. The spring is in operable communication with the first cantilever and the second cantilever.

Abstract: A gas detection device is provided. The device includes a substrate and a dielectric material applied to the substrate. A sensor material is applied to the dielectric film. The sensor material has a bottom, a side, and a top surface. An electrode material is at least partially applied to the dielectric film and at least partially applied to a portion of the side of the sensor material and a portion of the top surface of the sensor material to pin a portion of the sensor material to the dielectric material. The electrode material forms a vapor barrier upon the sensor material to facilitate preventing delamination between the sensor material and the electrode material over portions of the sensor material where the sensor material is not pinned to the dielectric material.

Abstract: A differential MEMS pressure sensor includes a topping wafer with a top side and a bottom side, a diaphragm wafer having a top side connected to the bottom side of the topping wafer and a bottom side, and a backing wafer having a top side connected to the bottom side of the diaphragm wafer and a bottom side. The topping wafer includes a first cavity formed in the bottom side of the topping wafer. The diaphragm wafer includes a diaphragm, a second cavity formed in the bottom side of the diaphragm wafer underneath the diaphragm, an outer portion surrounding the diaphragm, and a trench formed in the top side of the diaphragm wafer and positioned in the outer portion surrounding the diaphragm.

Abstract: A pressure sensor includes a housing, an isolator positioned at a first end of the housing, and a first cavity formed between the first end of the housing and the isolator. The pressure sensor further includes a second cavity formed in the housing and a channel with a first end fluidly connected to the first cavity and a second end fluidly coupled to the second cavity. A pressure sensor chip is positioned in the second cavity and includes a first diaphragm positioned at a top side of the pressure sensor chip laterally outwards from the second end of the channel.

Abstract: A temperature sensor assembly for measuring a gas temperature in a gas flow stream includes a first substrate having a first surface configured to be connected to a thermally conductive structure in a gas path, a first temperature sensor mounted to the first substrate a first distance from the first surface, and a second temperature sensor mounted to the first substrate a second distance from the first surface. The second distance is less than the first distance. The first and second temperature sensors are arranged along a temperature gradient.

Abstract: An isolated sensor and method of isolating a sensor are provided. The isolated sensor includes a mounting portion, a sensor portion disposed adjacent to the mounting portion, and at least one pedestal connecting a mounting portion to a sensor portion.

Abstract: A micromechanical pressure sensor for measuring a pressure differential includes a diaphragm having an inner region and two edge regions, one opposite the other with respect to the inner region. Two or more piezoresistive resistance devices are on the diaphragm, at least one in each of the inner and edge region, and are configured to be electrically connected in a bridge circuit. The micromechanical pressure sensor is configured so that an operating temperature of the one or more piezoresistive resistance devices in the inner region is substantially the same as an operating temperature of the one or more piezoresistive resistance devices in at least one of the edge regions throughout a full operating range such that an error of the micromechanical pressure sensor output resulting from self-heating is less than if the micromechanical pressure sensor were not configured to maintain the operating temperatures substantially the same.

Abstract: A combustible gas sensor that includes a reference sensor. The reference sensor includes a first substrate having a first substrate first surface, a first insulating layer disposed on the first substrate first surface, and a first heater at least one of embedded within the first insulating layer and disposed on the first insulating layer. The first substrate is a MEMS substrate.

Abstract: A micromechanical piezoresistive pressure sensor includes a diaphragm configured to mechanically deform in response to an applied load, a sensor substrate located on the diaphragm, and a number of piezoresistive resistance devices located on the sensor substrate. The piezoresistive resistance devices are arranged in a first planar array defining a grid pattern having two or more rows, each row being aligned in a first direction. The piezoresistive resistance devices are configured to be electrically connected in a number of bridge circuits, whereby the piezoresistive resistance devices in each row is electrically connected in an associated bridge circuit. A method of using the micromechanical piezoresistive pressure sensor is also disclosed.

Abstract: A gas detection device is provided having a substrate. A sensing element is coupled to the substrate and constructed and arranged to sense a target gas. A top surface is positioned on the sensing element opposite the substrate. A dopant is disposed within the sensing element. The dopant enhances the ability of the sensing element to sense the target gas. An electric field is applied to the dopant to constrain the dopant at or near the top surface of the sensing element.

Abstract: Provided are embodiments for a resistor array. The resistor array includes a plurality of resistor elements, where the plurality of resistor elements includes a redundancy region for a most significant bit of an expected value. The resistor array also includes one or more switches coupled to the plurality of resistor elements, and a first terminal and a second terminal coupled to the plurality of resistor elements. Also provided are embodiments for trimming the resistor array where the resistor array includes a redundancy region for a most significant bit for an expected value.

Abstract: A method of testing sensors includes providing a test sheet that includes a plurality of sensor assemblies, a plurality of test pads, and traces extending from the sensor assemblies to the plurality of test pads. A sensor is positioned on each sensor assembly. Each sensor is connected to the sensor assembly with wire bonds. An enclosure is formed over the plurality of sensor assemblies. An electrical signal is detected from each of the plurality of sensor assemblies at the test pads.

Abstract: A micromechanical pressure sensor for measuring a pressure differential includes a diaphragm having an inner region and two edge regions, one opposite the other with respect to the inner region. Two or more piezoresistive resistance devices are on the diaphragm, at least one in each of the inner and edge region, and are configured to be electrically connected in a bridge circuit. The micromechanical pressure sensor is configured so that an operating temperature of the one or more piezoresistive resistance devices in the inner region is substantially the same as an operating temperature of the one or more piezoresistive resistance devices in at least one of the edge regions throughout a full operating range such that an error of the micromechanical pressure sensor output resulting from self-heating is less than if the micromechanical pressure sensor were not configured to maintain the operating temperatures substantially the same.

Abstract: A MEMS device includes a first layer, a second layer connected to the first layer, a first mooring portion, a second mooring portion, and a MEMS device body. The MEMS device body is connected to the first mooring portion and the second mooring portion. The MEMS device body further includes a first cantilever attached to the first mooring portion, a second cantilever attached to the second mooring portion, and a spring. The spring is in operable communication with the first cantilever and the second cantilever.

Abstract: A micro-fuse assembly includes a substrate, a number of thin-film micro-fuses on the substrate, and a topping wafer configured to sealingly engage to at least one of the substrate or the thin-film micro-fuses to define a cavity therebetween. The cavity is configured to encapsulate the thin-film micro-fuses within an inert environment sealed within the cavity. A method of encapsulating a micro-fuse assembly within an inert environment using a topping wafer is also disclosed.