Abstract: A RF plasma generation and temperature control system for an inductively coupled plasma process chamber. The plasma generation system includes a heater that includes an elongated upper heating element substantially parallel to an elongated lower heating element, where the upper and lower heating elements are joined by one or more posts substantially perpendicular to the upper and lower heating elements. The system also including one or more RF coils featuring a crease at points of overlap with the posts. Also, a RF plasma generation system for an inductively coupled plasma process chamber, where the plasma generation system includes a heater thermally coupled to the chamber, and one or more RF coils coupled to the chamber, where the RF coils include a hollow tube having at least one flat side.

Abstract: Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.

Abstract: A gas flow comparator comprises a gas control mounted on a gas tube to set a gas flow or pressure of a gas passing thorough the gas tube. A principal flow splitter comprises an inlet port connected to the gas tube. First and second flow restrictors are connected to the principal flow splitter. A pair of secondary flow splitters are each connected to a restrictor outlet of a flow restrictor. A differential pressure gauge is connected to the secondary flow splitters. A pair of nozzle holders are connected to the secondary flow splitters and are capable of being connected to first and second nozzles. In operation, the pressure differential gauge registers a pressure differential proportional to a variation in the passage of gas through the first and second nozzles.

Abstract: The present invention is directed to achieving a desired the process uniformity of a substrate by modifying the distribution of thermal coupling between the substrate and the heater which heats the substrate. In one embodiment, the method comprises establishing a correlation between a uniformity parameter of the process to be performed on the substrate and a surface feature of a heater surface of the heater which is in substantially full contact with a bottom surface of the substrate. The method further comprises determining a desired surface feature of the heater surface of the heater in substantially full contact with the substrate, based on the correlation between the uniformity parameter of the process to be performed on the substrate and the surface feature of the heater surface of the heater, to achieve a preset process uniformity of the uniformity parameter.

Abstract: The present invention is directed to achieving a desired process uniformity of processing a substrate which is heated by a heater. In specific embodiments, the method comprises establishing a correlation between a uniformity parameter of the process to be performed on the substrate and a spacing which is disposed between the substrate and a heater surface of the heater facing the substrate. The method further comprises determining a surface profile of the heater surface of the heater facing the substrate, based on the correlation between the uniformity parameter of the process to be performed on the substrate and the spacing between the substrate and the heater surface of the heater, to achieve a preset process uniformity of the uniformity parameter.