Abstract: In a general aspect, junction properties of tunnel junctions are altered by voltage-assisted annealing processes. In some cases, a method includes obtaining a circuit comprising a tunnel junction, modifying a junction resistance of the tunnel junction by applying a voltage across the tunnel junction, and obtaining a measured value of the junction resistance. The tunnel junction may include a metal and a metal oxide.

Abstract: This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

Abstract: This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

Abstract: This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

Abstract: This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

Abstract: This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

Abstract: This disclosure describes systems, methods, and apparatus for multilayer superconducting structures comprising electroplated Rhenium, where the Rhenium operates in a superconducting regime at or above 4.2 K, or above 1.8 K where specific temperatures and times of annealing have occurred. The structure can include at least a first conductive layer applied to a substrate, where the Rhenium layer is electroplated to the first layer. A third layer formed from the same or a different conductor as the first layer can be formed atop the Rhenium layer.

Abstract: This invention relates to a quantum computing device and the means for fabrication thereof. One side of the device includes a circuit containing at least one qubit patterned in a film of superconducting material. The other side of the device includes a conductive plane, also formed from a film of superconducting material. The proximity of the conductive plane suppresses radiative decay of the qubit, while readout is achieved by coupling the qubit to a resonator.

Abstract: A zinc/air button cell having an air spacer member within the air inlet space of the cathode can. The spacer member may be of solid plastic, rubber, or metal construction inserted into the air inlet space (plenum region) of the cathode can adjacent air holes in the can. The spacer member may be of disk-like configuration with cut out sections therein of varying configurations. The cut out sections in the spacer disk form channels of unoccupied free space underlying the air holes allowing air to pass unobstructed from the air holes to the cathode assembly. The channels of free space are generally much wider than the diameter of the air holes. The wide channels of unoccupied “free space” running between the air holes and cathode assembly improve air flow distribution to the cathode assembly. The spacer disk simultaneously provides sufficient support to the cathode assembly preventing it from bending into the cathode can air inlet space.

Abstract: A magnetoresistive sensing apparatus is disclosed, comprising a magnetic film having a zig-zag shaped structure, a central axis, and a magnetization associated with the magnetic film, wherein the zig-zag shaped structure biases the magnetization direction alternately at positive and negative angles thereof, thereby permitting the magnetoresistive sensing apparatus to be sensitive to a magnetic field parallel to the axis of the magnetoresistive sensing apparatus and insensitive to magnetic fields perpendicular to the axis.

Abstract: A non-hermetically sealed, electrochemical power source, includes a first electrode, a second electrode, a separator between the first electrode and the second electrode, and a membrane in fluid communication with an environment external to the battery. The second electrode is between the separator and the membrane. The membrane includes a first portion having a different property, e.g., density, porosity, mass transport resistance, thickness, or gas permeability, than a second portion of the membrane. Methods of designing an electrochemical cell cartridge are also disclosed.

Abstract: A zinc-air cell with an anode cup comprising anode active material and a cathode cup comprising catalytic or cathode active material wherein the cathode cup comprises an exposed nickel layer which has been softened to improve electrical contact with the device being powered such as a hearing aid. A cathode cup in desired shape and size is formed of a substrate metal such as cold rolled steel or stainless steel. A nickel layer is plated onto the cathode cup substrate metal and is subsequently heat treated resulting in reduction in the surface hardness of the nickel layer. This improves the reliability of the electrical contact between the cathode cup and the corresponding terminal in the hearing aid or other device being powered.

Abstract: A textured dual layer metal air cathode is disclosed. The cathode includes a first layer that contains 30% to 70% organic polymer by weight, a second layer that contains 10% to 30% organic polymer by weight, and a catalyst. The first layer and the second layer contact each other at a textured interface.

Abstract: A textured dual layer metal air cathode is disclosed. The cathode includes a first layer that contains 30% to 70% organic polymer by weight, a second layer that contains 10% to 30% organic polymer by weight, and a catalyst. The first layer and the second layer contact each other at a textured interface.

Abstract: A fluorosurfactant, preferably an anionic fluorosurfactant, can be added to the anode mixture of a zinc/air cell. A desirable surfactant is an anionic fluoroaliphaticcarboxylate. The addition of the surfactant reduces gassing and improves cell performance. The anode casing can also be treated with the surfactant solution prior to inserting the anode mixture therein. The anode casing of a zinc/air depolarized cell can also be heat treated after the casing has been formed but before anode material comprising zinc is inserted therein. The anode casing has a layer of copper on its inside surface. The process comprises heat treating the anode casing by passing a gas at a temperature between about 200° C. and 700° C., preferably between about 300° C. and 600° C. in contact therewith to form a heat treated anode casing and then cooling said heat treated anode casing to ambient temperature.

Abstract: A process for heat treating the metal sheeting forming the anode casing of a zinc/air depolarized cell before anode material comprising zinc is inserted into the anode casing. The anode casing has a layer of copper on its inside surface. The process comprises heat treating the metal sheeting forming the anode casing by passing a gas at a temperature between about 200° C. and 700° C., preferably between about 300° C. and 600° C. in contact therewith to form a heat treated sheeting and then cooling said heat treated sheeting to ambient temperature. The anode casing is stored away from atmospheric air until anode active material is inserted therein during cell assembly. The heat treating process significantly reduces gassing during cell discharge and storage. The cell's capacity and performance is improved when the cell's anode comprises particulate zinc (or zinc alloy) plated with indium, preferably between about 200 and 600 ppm indium.

Abstract: A process for heat treating an anode casing of a zinc/air depolarized cell after the casing has been formed but before anode material comprising zinc is inserted therein. The anode casing has a layer of copper on its inside surface. The process comprises heat treating the anode casing by passing a gas at a temperature between about 200° C. and 700° C., preferably between about 300° C. and 600° C. in contact therewith to form a heat treated anode casing and then cooling said heat treated anode casing to ambient temperature. The heat treated anode casing is stored away from atmospheric air until anode active material is inserted therein during cell assembly. The heat treating process significantly reduces gassing during cell discharge and storage and eliminates the need to add mercury to the anode material.