Patents by Inventor David Pecora

David Pecora has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Valve gates
    Patent number: 11746909
    Abstract: A valve gate may include a threaded rod, a nut engaged with the threaded rod, a movable body mounted on the threaded rod, a seal, a pair of levers, and first and second housing components that at least partially enclose the other components. The threaded rod can be turned to drive translation of the nut and the movable body along the threaded rod. Translation of the movable body along the threaded rod can drive rotation of the levers outward away from the threaded rod, and rotation of the levers can force the seal to expand outward from the threaded rod. Such expansion can force the seal into engagement with an inner surface of a pipeline.
    Type: Grant
    Filed: March 30, 2021
    Date of Patent: September 5, 2023
    Assignee: ROMAC INDUSTRIES, INC.
    Inventor: Aaron David Pecora
  • VALVE GATES
    Publication number: 20230136377
    Abstract: A valve gate may include a threaded rod, a nut engaged with the threaded rod, a movable body mounted on the threaded rod, a seal, a pair of levers, and first and second housing components that at least partially enclose the other components. The threaded rod can be turned to drive translation of the nut and the movable body along the threaded rod. Translation of the movable body along the threaded rod can drive rotation of the levers outward away from the threaded rod, and rotation of the levers can force the seal to expand outward from the threaded rod. Such expansion can force the seal into engagement with an inner surface of a pipeline.
    Type: Application
    Filed: March 30, 2021
    Publication date: May 4, 2023
    Inventor: Aaron David PECORA
  • Etch of silicon nitride selective to silicon and silicon dioxide useful during the formation of a semiconductor device
    Publication number: 20060231522
    Abstract: A method for etching silicon nitride selective to silicon dioxide and silicon (polycrystalline silicon or monocrystalline silicon) comprises the use of oxygen along with an additional etchant of either CHF3 or CH2F2. Flow rates, power, and pressure settings are specified.
    Type: Application
    Filed: June 12, 2006
    Publication date: October 19, 2006
    Inventor: David Pecora