Abstract: Methods and apparatuses for detecting particle defects on partially fabricated semiconductor wafers using chemical markers capable of binding to defects that are not detectable by laser diffractometry are provided herein.

Abstract: Universal plasma unconfinement detection systems configured to detect the plasma unconfinement condition in the plasma processing chamber and methods therefor. The detection systems and methods are designed to reliably and accurately detect the existence of the plasma unconfinement condition in a process-independent and recipe-independent manner.

Abstract: Universal plasma unconfinement detection systems configured to detect the plasma unconfinement condition in the plasma processing chamber and methods therefor. The detection systems and methods are designed to reliably and accurately detect the existence of the plasma unconfinement condition in a process-independent and recipe-independent manner.

Abstract: In a plasma processing system, a method for detecting an arc event on a substrate in a plasma chamber having a chuck is disclosed. The method includes positioning a substrate on the chuck. The method also includes providing a vibration-sensing arrangement in the plasma chamber, the vibration-sensing arrangement being configured for measuring arc-induced vibrations on the substrate, the arc-induced vibrations being generated when an arc strikes the substrate during plasma processing of the substrate in the plasma processing chamber.

Abstract: The present inventions is a method of trench formation within a dielectric layer, comprising, first, etching a via within the dielectric layer. After the via is etched, an organic plug is used to fill a portion of the via. After the desired amount of organic plug has been etched from the via, a trench is etched with a first gas mixture to a first depth, and a second gas mixture is used to further etch the trench to the final desired trench depth. Preferably, the method is used for low-k dielectrics that do not have an intermediate etch stop layer. Additionally, it is preferable that the first gas mixture is a polymeric gas mixture and the second gas mixture is a non-polymeric gas mixture. As a result of using this method, an interconnect structure for a low-k dielectric without an intermediate etch stop layer having a trench with trench edges that are substantially orthogonal and a via with via edges that are substantially orthogonal is generated.

Abstract: A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.

Abstract: A microwave transmitting window for a plasma processing device. The window is a body of one or more pieces of the same or different dielectric materials. A surface of the window facing a microwave transmitting horn or waveguide is planar and extends perpendicularly to an axial direction. An opposite surface of the window is recessed such that the body has a non-uniform thickness between the two surfaces. The recessed surface can have various shapes and the overall size of the window can be equal to the size of a plasma formation chamber of the plasma processing device. The outlet of the plasma formation chamber can be formed in an end wall or the outlet can be formed by the inner periphery of the plasma formation chamber.