Patents by Inventor David Punsalan

David Punsalan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8969865
    Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
    Type: Grant
    Filed: July 31, 2006
    Date of Patent: March 3, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Gregory Herman, David Punsalan, Randy Hoffman, Jeremy Anderson, Douglas Keszler, David Blessing
  • Patent number: 8143706
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.
    Type: Grant
    Filed: July 16, 2007
    Date of Patent: March 27, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Peter Mardilovich, Laura Kramer, Gregory S Herman, Randy Hoffman, David Punsalan
  • Patent number: 7799624
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.
    Type: Grant
    Filed: April 16, 2008
    Date of Patent: September 21, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Randy Hoffman, Peter Mardilovich, David Punsalan
  • Patent number: 7695998
    Abstract: Inorganic semiconductive films are made by depositing a suitable precursor substance upon a substrate, irradiating the precursor substance with electromagnetic radiation to form a nascent film, and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film.
    Type: Grant
    Filed: July 2, 2005
    Date of Patent: April 13, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: David Punsalan, John Thompson
  • Publication number: 20100044698
    Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
    Type: Application
    Filed: July 31, 2006
    Publication date: February 25, 2010
    Inventors: Gregory Herman, David Punsalan, Randy Hoffman, Jeremy Anderson, Douglas Keszler, David Blessing
  • Patent number: 7632590
    Abstract: A method for manufacturing an electrolyte includes coupling a substrate to a charged electrode and electrodepositing a polymeric electrolyte on the substrate.
    Type: Grant
    Filed: July 15, 2003
    Date of Patent: December 15, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: David Punsalan, Peter Mardilovich, Gregory S Herman
  • Patent number: 7575979
    Abstract: A method includes forming a fluid including an inorganic semiconductor material, depositing a layer of said fluid on a substrate to form a film, and curing said film to form a porous semiconductor film.
    Type: Grant
    Filed: June 22, 2004
    Date of Patent: August 18, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: David Punsalan, Peter Mardilovich, Randy Hoffman
  • Patent number: 7504013
    Abstract: A method of forming an electrolyte includes removably coupling a perimeter support to a temporary substrate, and electrodepositing an electrolyte composite film on the temporary substrate.
    Type: Grant
    Filed: November 10, 2003
    Date of Patent: March 17, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: David Punsalan, Gregory Herman, Peter Mardilovich
  • Publication number: 20090068800
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film are described.
    Type: Application
    Filed: October 10, 2008
    Publication date: March 12, 2009
    Inventors: Curt Nelson, David Punsalan, Peter S. Nyholm
  • Patent number: 7476460
    Abstract: A thin metal oxide film includes a solution of one or more metal salts and one or more water soluble polymers. A mechanism is provided for converting the metal salt(s) and water soluble polymer(s) solution into the thin metal oxide film.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: January 13, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Christopher C. Beatty, David Punsalan
  • Publication number: 20080197414
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.
    Type: Application
    Filed: April 16, 2008
    Publication date: August 21, 2008
    Inventors: Randy Hoffman, Peter Mardilovich, David Punsalan
  • Patent number: 7381633
    Abstract: A method of making a patterned metal oxide film includes jetting a sol-gel solution on a substrate. The sol-gel solution is dried to form a gel layer on the substrate. Portions of the gel layer are irradiated to pattern the gel layer and to form exposed portions. Irradiation causes the exposed portions of the gel layer to become at least one of substantially condensed to an oxide, substantially densified, substantially cured, and combinations thereof. The unexposed portions of the gel layer are removed, thereby forming the patterned metal oxide film.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: June 3, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: John O. Thompson, Curt Lee Nelson, David Punsalan
  • Patent number: 7374984
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: May 20, 2008
    Inventors: Randy Hoffman, Peter Mardilovich, David Punsalan
  • Patent number: 7334881
    Abstract: A system to deposit drops on a substrate includes a dispenser to dispense the drops, a shutter disposed between the dispenser and the substrate to focus the drops, and a screen, disposed between the dispenser and the shutter, configured to provide a charge to the drops.
    Type: Grant
    Filed: July 12, 2004
    Date of Patent: February 26, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: David Punsalan, Peter Mardilovich, Gregory Herman, John M. Koegler
  • Publication number: 20070284701
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.
    Type: Application
    Filed: July 16, 2007
    Publication date: December 13, 2007
    Inventors: Peter Mardilovich, Laura Kramer, Gregory Herman, Randy Hoffman, David Punsalan
  • Patent number: 7265063
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.
    Type: Grant
    Filed: October 22, 2004
    Date of Patent: September 4, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Peter Mardilovich, Laura Kramer, Gregory S Herman, Randy Hoffman, David Punsalan
  • Publication number: 20070173051
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film are described.
    Type: Application
    Filed: March 25, 2007
    Publication date: July 26, 2007
    Inventors: Curt Nelson, David Punsalan, Peter Nyholm
  • Patent number: 7208401
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film are described.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: April 24, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Curt Nelson, David Punsalan, Peter S. Nyholm
  • Publication number: 20070080428
    Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
    Type: Application
    Filed: October 12, 2005
    Publication date: April 12, 2007
    Inventors: Gregory Herman, David Punsalan, Randy Hoffman, Jeremy Anderson, Douglas Keszler, David Blessing
  • Publication number: 20070003877
    Abstract: Inorganic semiconductive films are made by depositing a suitable precursor substance upon a substrate, irradiating the precursor substance with electromagnetic radiation to form a nascent film, and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film.
    Type: Application
    Filed: July 2, 2005
    Publication date: January 4, 2007
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: David Punsalan, John Thompson