Abstract: Radio frequency (RF) amplification devices are disclosed along with methods of providing power to an RF signal. In one embodiment, an RF amplification device includes an RF amplification circuit and a voltage regulation circuit. The RF amplification circuit includes a plurality of RF amplifier stages coupled in cascade. The voltage regulation circuit is coupled to provide a regulated voltage to a driver RF amplifier stage. The voltage regulation circuit is configured to generate the regulated voltage so that the maximum output power of the RF amplification circuit is provided approximately at a first power level while the supply voltage is above a threshold voltage level. The first power level should be within the physical capabilities of the RF amplification circuit, and thus, the RF amplification circuit is prevented from being damaged once the supply voltage is above the threshold voltage level.

Abstract: Radio frequency (RF) amplification devices are disclosed along with methods of providing power to an RF signal. In one embodiment, an RF amplification device includes an RF amplification circuit and a voltage regulation circuit. The RF amplification circuit includes a plurality of RF amplifier stages coupled in cascade. The voltage regulation circuit is coupled to provide a regulated voltage to a driver RF amplifier stage. The voltage regulation circuit is configured to generate the regulated voltage so that the maximum output power of the RF amplification circuit is provided approximately at a first power level while the supply voltage is above a threshold voltage level. The first power level should be within the physical capabilities of the RF amplification circuit, and thus, the RF amplification circuit is prevented from being damaged once the supply voltage is above the threshold voltage level.

Abstract: An amplifier chain that switches between a saturated mode of operation and a linear mode of operation comprises at least two amplifier stages. A switch is associated with the first amplifier stage and dampens the gain of the amplifier chain when the switch is closed. In a first embodiment, this is done by bypassing the first amplifier stage. In second and third embodiments, this is done by providing a feedback loop to the first amplifier stage. Dynamic device scaling and changing the bias may also be used to affect the performance of the amplifier chain.

Abstract: An amplifier chain that switches between a saturated mode of operation and a linear mode of operation comprises at least two amplifier stages. A switch is associated with the first amplifier stage and dampens the gain of the amplifier chain when the switch is closed. In a first embodiment, this is done by bypassing the first amplifier stage. In second and third embodiments, this is done by providing a feedback loop to the first amplifier stage. Dynamic device scaling and changing the bias may also be used to affect the performance of the amplifier chain.

Abstract: A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.

Abstract: The amplifier (201) uses transistors (401,403) such as MOSFET transistors in a current mirror configuration. The transistors (401,403) are easy to package as surface mount devices. The drain port of the first transistor is coupled to an output signal (207) and a bias input signal (VB+). A gate port of the first transistor is coupled to a bias control input (117) and the signal input (115). The source of the first transistor and the source of the second transistor are coupled to an electrical ground (409). A first end of a resistive device (411) is coupled to the gate port and the drain port of the second transistor and a second end of the resistive device (411) is coupled the signal input (115) and the bias control input (117). This amplifier (201) has low sensitivity to the variations of the bias current to the control signal threshold, making the amplifier ideal for use in a radiotelephone (103).

Abstract: A temperature compensated power detector utilizes a temperature compensating diode connected to an inverting input of an amplifier to enable the amplifier to substantially cancel out undesirable temperature effects caused by a power level detector diode coupled to the non-inverting input of the amplifier. As a result, the amplifier output voltage tends to remain constant over temperature in response to a fixed power level being applied to the detector. A lookup table is utilized to determine the power level corresponding to a power detector output voltage of a particular magnitude.