Abstract: A planar sensor array capable of three-dimensional magnetic field sensing is disclosed. The sensor array may be utilized, for example, in connection with security inspections and detection of concealed electronics and contraband. Each sensor pixel may comprise a planar spiral inductor to measure a magnetic field of interest in a first dimension, a first Hall effect sensor to measure the magnetic field of interest in a second dimension, and a second Hall effect sensor to measure the magnetic field of interest in the third dimension.

Abstract: A planar sensor array capable of three-dimensional magnetic field sensing is disclosed. The sensor array may be utilized, for example, in connection with security inspections and detection of concealed electronics and contraband.

Abstract: Embodiments of flexible identification systems are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: An integrated circuit device that is secure from invasion and related methods are disclosed herein. Other embodiments are also disclosed herein.

Abstract: Embodiments of dual stage active pixel devices are described herein. Other examples, implementations, and related methods are also disclosed herein.

Abstract: Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. Other embodiments, examples thereof, and related methods are also disclosed herein.

Abstract: Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. In one example, a method for providing an integrated circuit can comprise providing a memory cell coupled to a first bitline and to a second bitline, and at least one of (a) providing a read assist mechanism configured to couple to the memory cell via the first and second bitlines, or (b) providing a memory reset mechanism configured to couple to the memory cell via the first and second bitlines. Providing the memory cell can comprise providing a first transistor comprising a first threshold voltage, providing a second transistor comprising a second threshold voltage, and cross-coupling the first and second transistors of the memory cell together. A difference between the first and second threshold voltages can correspond to a logic state of the memory cell. Other embodiments, examples, and related methods are also disclosed herein.

Abstract: Embodiments of amplifiers with depletion and enhancement mode thin film transistors are disclosed herein. Other examples, devices, and related methods are also disclosed herein.

Abstract: Embodiments of sensor systems and related methods of operating and manufacturing the same are described herein. The sensor systems can be used to detect atomic or subatomic particles or radiation. Other embodiments and related methods are also disclosed herein.

Abstract: Embodiments of sensor systems and related methods of operating and manufacturing the same are described herein. The sensor systems can be used to detect atomic or subatomic particles or radiation. Other embodiments and related methods are also disclosed herein.

Abstract: Embodiments of amplifiers with depletion and enhancement mode thin film transistors are disclosed herein. Other examples, devices, and related methods are also disclosed herein.

Abstract: Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: An integrated circuit device that is secure from invasion and related methods are disclosed herein. Other embodiments are also disclosed herein.

Abstract: Embodiments of wearable flexible devices and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: Embodiments of flexible identification systems are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: Embodiments of antennas over flexible substrates are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: Embodiments of vicinity sensor systems are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. Other embodiments, examples thereof, and related methods are also disclosed herein.

Abstract: Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. Other embodiments, examples thereof, and related methods are also disclosed herein.